MT46H32M32LFJG-6:A TR Micron Technology Inc, MT46H32M32LFJG-6:A TR Datasheet - Page 3

• Manufacturer Part Number: MT46H32M32LFJG-6:A TR
• Description: IC DDR SDRAM 1GBIT 168VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H32M32LFJG-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (32M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 168-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

General Description
Figure 2:
PDF: 09005aef833508fb/Source: 09005aef83350d72
ddr_mobile_sdram_only_168b_pop.fm - Rev. B 01/09 EN
BA0, BA1
Address
CAS#
RAS#
WE#
CKE
CK#
CS#
CK
Functional Block Diagram (64 Meg x 16)
Address
register
Standard mode
Extended mode
register
register
Control
logic
The 1Gb Mobile LPDDR die contained within this package is a high-speed CMOS,
dynamic random access memory containing 1,073,741,824 bits. It is internally config-
ured as a quad-bank DRAM. Each of the x16’s 268,435,456-bit banks is organized as
16,384 rows by 1024 columns by 16 bits. Each of the x32’s 268,435,456-bit banks is orga-
nized as 8192 rows by 1024 columns by 32 bits.
Refresh
counter
address
Row-
MUX
2
2
Column-
counter/
address
control
Bank
logic
latch
168-Ball x16, x32 Mobile LPDDR PoP (TI OMAP)Mobile DDR
decoder
address
Bank 0
row-
latch
and
1
Sense amplifiers
DM mask logic
I/O gating
decoder
memory
Column
Bank 0
array
Bank 1
3
Bank 2
Bank 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
32
32
32
Read
latch
out
CK
CK
drivers
Write
FIFO
and
16
16
CK
in
MUX
Col 0
Mask
Data
Col 0
32
4
CK
2
2
16
16
generator
DQS
registers
16
Input
©2008 Micron Technology, Inc. All rights reserved.
SDRAM Addendum
Data
2
2
16
16
2
2
16
DRVRS
DQS
2
RCVRS
Preliminary
LDM,
UDM
LDQS,
UDQS
DQ0–
DQ15