MT46H32M32LFJG-6:A TR Micron Technology Inc, MT46H32M32LFJG-6:A TR Datasheet - Page 9

• Manufacturer Part Number: MT46H32M32LFJG-6:A TR
• Description: IC DDR SDRAM 1GBIT 168VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H32M32LFJG-6:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (32M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 168-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 5:
Table 6:
PDF: 09005aef833508fb/Source: 09005aef83350d72
ddr_mobile_sdram_only_168b_pop.fm - Rev. B 01/09 EN
Absolute Maximum Ratings
Recommended Operating Conditions
Stresses greater than those listed under “Absolute Maximum Ratings” may cause perma-
nent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Parameters/Conditions
Vdd, Vddq
relative to Vss
Voltage on any pin
relative to Vss
Storage temperature range
Parameters
Supply voltage
I/O supply voltage
Operating temperature range
S
168-Ball x16, x32 Mobile LPDDR PoP (TI OMAP)Mobile DDR
upply voltage
9
Symbol
Symbol
Vddq
Vddq
Vdd,
Vdd
Vin
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
–1.0
–0.5
Min
1.70
1.70
–55
–40
2.4 or (Vddq + 0.3V),
1.80
1.80
whichever is less
Typ
–
©2008 Micron Technology, Inc. All rights reserved.
SDRAM Addendum
Max
+150
2.4
Max
1.95
1.95
+85
Preliminary
Unit
Unit
°C
°C
V
V
V
V