M29W160EB70N6F NUMONYX, M29W160EB70N6F Datasheet - Page 23

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M29W160EB70N6F

Manufacturer Part Number
M29W160EB70N6F
Description
IC FLASH 16MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W160EB70N6F

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
16M (2M x 8 or 1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NOR
Density
16 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 31
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 12. Read Mode AC Waveforms
Table 12. Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
t
t
t
Symbol
t
GHQZ
ELQX
GLQX
EHQZ
t
t
t
t
t
t
t
t
t
t
t
GHQX
GLQV
EHQX
AXQX
BHQV
AVQV
ELQV
ELBH
BLQZ
AVAV
ELBL
A0-A19/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
2. 70 ns becomes 80 ns if the 80 ns device code is used.
BYTE
(1)
(1)
(1)
(1)
t
t
t
t
t
t
FHQV
ELFH
FLQZ
ELFL
t
t
ACC
t
t
Alt
OLZ
t
t
t
OH
RC
CE
OE
HZ
DF
LZ
tELBL/tELBH
Address Valid to Next Address Valid
Address Valid to Output Valid
Chip Enable Low to Output Transition
Chip Enable Low to Output Valid
Output Enable Low to Output Transition
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Chip Enable, Output Enable or Address
Transition to Output Transition
Chip Enable to BYTE Low or High
BYTE Low to Output Hi-Z
BYTE High to Output Valid
Parameter
tAVQV
tBHQV
tELQX
tELQV
tGLQX
tGLQV
tAVAV
VALID
Test Condition
E = V
E = V
G = V
G = V
G = V
G = V
E = V
E = V
G = V
E = V
tBLQZ
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
,
,
VALID
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
M29W160ET, M29W160EB
tGHQX
tGHQZ
70/7A/80
M29W160E
tEHQZ
70
70
70
25
25
25
25
30
0
0
0
5
(2)
tEHQX
tAXQX
90
90
90
90
35
30
30
30
40
0
0
0
5
AI02922
Unit
23/42
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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