M29W160EB70N6F NUMONYX, M29W160EB70N6F Datasheet - Page 29

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M29W160EB70N6F

Manufacturer Part Number
M29W160EB70N6F
Description
IC FLASH 16MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W160EB70N6F

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
16M (2M x 8 or 1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NOR
Density
16 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 31
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W160EB70N6F
Manufacturer:
MIDCOM
Quantity:
433
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Manufacturer:
ST
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Manufacturer:
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Quantity:
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4 425
Company:
Part Number:
M29W160EB70N6F
Quantity:
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Figure 18. FBGA64 11 x 13 mm—8 x 8 active ball array, 1 mm pitch, package outline, bottom view
Table 18. FBGA64 11 x 13 mm—8 x 8 active ball array, 1 mm pitch, package mechanical data
Symbol
ddd
D1
FD
FE
SD
SE
A1
A2
E1
A
D
E
b
e
E
11.00
0.48
0.80
7.00
1.00
13.0
7.00
2.00
3.00
0.50
0.50
Typ
BALL "A1"
FD
E1
FE
A
millimeters
10.90
12.90
e
0.43
0.55
Min
D1
D
SD
b
11.10
13.10
Max
1.40
0.53
0.65
0.15
A1
SE
A2
0.0196
0.0196
0.018
0.031
0.433
0.275
0.039
0.511
0.275
0.078
0.118
Typ
M29W160ET, M29W160EB
BGA-Z23
inches
0.016
0.021
0.429
0.507
Min
ddd
0.0059
0.055
0.025
0.437
0.515
Max
29/42

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