M29W160EB70N6F NUMONYX, M29W160EB70N6F Datasheet - Page 24

• Manufacturer Part Number: M29W160EB70N6F
• Description: IC FLASH 16MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W160EB70N6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Package: 48TSOP
• Cell Type: NOR
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 31
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M29W160ET, M29W160EB
Figure 13. Write AC Waveforms, Write Enable Controlled
Table 13. Write AC Characteristics, Write Enable Controlled
Note: 1. Sampled only, not 100% tested.
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t
Symbol
WHRL
t
t
t
t
t
t
t
t
t
t
t
VCHEL
t
WLWH
DVWH
WHDX
WHEH
WHWL
GHWL
WHGL
AVWL
WLAX
ELWL
2. 70 ns becomes 80 ns if the 80 ns device code is used.
AVAV
A0-A19/
A–1
E
G
W
DQ0-DQ7/
DQ8-DQ15
V CC
RB
(1)
t
t
t
t
BUSY
t
t
WPH
OEH
Alt
t
t
t
t
t
t
VCS
WC
WP
DH
CH
CS
DS
AS
AH
Address Valid to Next Address Valid
Chip Enable Low to Write Enable Low
Write Enable Low to Write Enable High
Input Valid to Write Enable High
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Address Valid to Write Enable Low
Write Enable Low to Address Transition
Output Enable High to Write Enable Low
Write Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
tVCHEL
CC
High to Chip Enable Low
tELWL
tGHWL
tAVWL
Parameter
tAVAV
VALID
tWLWH
tDVWH
tWHRL
VALID
tWLAX
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
tWHEH
tWHGL
tWHWL
70/7A/80
tWHDX
M29W160E
70
45
45
30
45
30
50
0
0
0
0
0
0
(2)
AI02923
90
90
50
50
30
50
35
50
0
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs