M29W160EB70N6F NUMONYX, M29W160EB70N6F Datasheet - Page 37

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M29W160EB70N6F

Manufacturer Part Number
M29W160EB70N6F
Description
IC FLASH 16MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W160EB70N6F

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
16M (2M x 8 or 1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NOR
Density
16 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 31
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 19. Programmer Equipment Block Protect Flowchart
Note: 1. Address Inputs A19-A12 give the address of the block that is to be protected. It is imperative that they remain stable during the
2. During the Protect and Verify phases of the algorithm, Chip Enable E must be kept Low, V
operation.
ADDRESS = BLOCK ADDRESS
A0, A6 = V IL ,
G, A9 = V ID ,
Read DATA
E, G = V IH ,
Wait 100µs
E, G = V IH
W = V IL
E = V IL
Wait 60ns
A1 = V IH
A9 = V IH
Wait 4µs
Wait 4µs
W = V IH
W = V IH
G = V IL
START
E = V IL
DATA
PASS
n = 0
01h
=
YES
(1)
(1)
NO
E, G = V IH
A9 = V IH
FAIL
= 25
++n
YES
NO
M29W160ET, M29W160EB
IL
.
AI03469b
37/42

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