M29W160EB70N6F NUMONYX, M29W160EB70N6F Datasheet - Page 25

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M29W160EB70N6F

Manufacturer Part Number
M29W160EB70N6F
Description
IC FLASH 16MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W160EB70N6F

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
16M (2M x 8 or 1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NOR
Density
16 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 31
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 14. Write AC Waveforms, Chip Enable Controlled
Table 14. Write AC Characteristics, Chip Enable Controlled
Note: 1. Sampled only, not 100% tested.
Symbol
t
t
EHRL
t
t
t
VCHWL
t
t
t
t
t
t
t
t
EHWH
WLEL
DVEH
EHDX
GHEL
EHGL
ELEH
EHEL
2. 70 ns becomes 80 ns if the 80 ns device code is used.
AVAV
AVEL
ELAX
A0-A19/
A–1
W
G
E
DQ0-DQ7/
DQ8-DQ15
V CC
RB
(1)
t
t
t
BUSY
t
t
t
t
t
CPH
OEH
Alt
t
t
t
t
VCS
WC
WH
WS
CP
DS
DH
AH
AS
Address Valid to Next Address Valid
Write Enable Low to Chip Enable Low
Chip Enable Low to Chip Enable High
Input Valid to Chip Enable High
Chip Enable High to Input Transition
Chip Enable High to Write Enable High
Chip Enable High to Chip Enable Low
Address Valid to Chip Enable Low
Chip Enable Low to Address Transition
Output Enable High Chip Enable Low
Chip Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
tVCHWL
CC
High to Write Enable Low
tWLEL
tGHEL
tAVEL
Parameter
tAVAV
VALID
tELEH
tDVEH
tEHRL
VALID
tELAX
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
tEHWH
M29W160ET, M29W160EB
tEHGL
70/7A/80
tEHEL
tEHDX
M29W160E
70
45
45
30
45
30
50
0
0
0
0
0
0
(2)
AI02924
90
90
50
50
30
50
35
50
0
0
0
0
0
0
Unit
25/42
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs

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