M25P64-VME6G NUMONYX, M25P64-VME6G Datasheet - Page 24

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M25P64-VME6G

Manufacturer Part Number
M25P64-VME6G
Description
IC FLASH 64MBIT 50MHZ 8VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P64-VME6G

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
64M (8M x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Package
8VDFPN EP
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 128
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P64-VME6G
Manufacturer:
MICRON
Quantity:
1 500
Part Number:
M25P64-VME6G
Manufacturer:
ST
0
Part Number:
M25P64-VME6G
Manufacturer:
MICRON/美光
Quantity:
20 000
6.2
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Write Disable (WRDI)
The Write Disable (WRDI) instruction
The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under the following conditions:
Figure 9.
Power-up
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction completion
Page Program (PP) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
Write Disable (WRDI) instruction sequence
S
C
D
Q
High Impedance
0
(Figure
1
2
Instruction
3
9) resets the Write Enable Latch (WEL) bit.
4
5
6
7
AI03750D

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