M25P64-VME6G NUMONYX, M25P64-VME6G Datasheet - Page 42

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M25P64-VME6G

Manufacturer Part Number
M25P64-VME6G
Description
IC FLASH 64MBIT 50MHZ 8VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P64-VME6G

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
64M (8M x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Package
8VDFPN EP
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 128
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P64-VME6G
Manufacturer:
MICRON
Quantity:
1 500
Part Number:
M25P64-VME6G
Manufacturer:
ST
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Part Number:
M25P64-VME6G
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Quantity:
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42/55
Table 15.
1. Technology T9HX devices are identified by process identification digit "4" in the device marking.
Symbol
I
I
I
I
I
I
V
V
V
I
CC1
CC2
CC3
CC4
CC5
CC6
V
I
LO
OH
LI
OL
IH
IL
Input leakage current
Output leakage current
Standby current
Deep Power-down current
Operating current (READ)
Operating current (PP)
Operating current (WRSR)
Operating current (SE)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
DC characteristics process technology T9HX
Parameter
Test condition (in addition
S = V
S = V
C = 0.1V
C = 0.1V
to those in
75 MHz, DQ1 = open
33 MHz, DQ1 = open
CC
CC
I
OH
I
OL
, V
, V
S = V
S = V
S = V
= –100 µA
CC
CC
= 1.6 mA
IN
IN
= V
= V
/ 0.9V
/ 0.9V
Table
CC
CC
CC
SS
SS
CC
CC
or V
or V
10)
at
at
CC
CC
(1)
V
0.7V
CC
– 0.5
Min
–0.2
CC
V
0.3V
CC
Max
± 2
± 2
0.4
50
10
12
15
15
15
4
+0.4
CC
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V

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