M25P64-VME6G NUMONYX, M25P64-VME6G Datasheet - Page 45

• Manufacturer Part Number: M25P64-VME6G
• Description: IC FLASH 64MBIT 50MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P64-VME6G

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 64M (8M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Package: 8VDFPN EP
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 128
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 17.
1. Technology T9HX devices are identified by process identification digit "4" in the device marking.
2. Typical values given for T
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
7. V
8. When using the page program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
9. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Figure 21. Serial input timing
Symbol
known. Avoid applying V
sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
CH
t
t
PPH
SE
BE
+ t
should be kept at a valid level until the program or erase operation has completed and its result (success or failure) is
CL
S
C
D
Q
must be greater than or equal to 1/ f
AC characteristics, T9HX parts (page 2 of 2)
Alt.
tCHSL
Sector erase cycle time
Bulk erase cycle time
tDVCH
PPH
A
= 25° C.
to the W/VPP pin during Bulk Erase.
Test conditions specified in
High Impedance
MSB IN
tSLCH
Parameter
C
tCHDX
.
Table 10
tCLCH
(1)
tCHSH
Min
and
LSB IN
Table 12
Typ
tCHCL
0.7
tSHSL
68
(2)
tSHCH
AI01447C
Max
160
3
Unit
45/55
s
s