M25P64-VME6G NUMONYX, M25P64-VME6G Datasheet - Page 37

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M25P64-VME6G

Manufacturer Part Number
M25P64-VME6G
Description
IC FLASH 64MBIT 50MHZ 8VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P64-VME6G

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
64M (8M x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Package
8VDFPN EP
Cell Type
NOR
Density
64 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 128
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
Part Number:
M25P64-VME6G
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Manufacturer:
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7
Power-up and Power-down
At Power-up and Power-down, the device must not be selected (that is Chip Select (S) must
follow the voltage applied on V
A safe configuration is provided in
To avoid data corruption and inadvertent write operations during Power-up, a Power On
Reset (POR) circuit is included. The logic inside the device is held reset while V
than the Power On Reset (POR) threshold voltage, V
the device does not respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page Program (PP), Sector Erase
(SE), Bulk Erase (BE) and Write Status Register (WRSR) instructions until a time delay of
t
correct operation of the device is not guaranteed if, by this time, V
No Write Status Register, Program or Erase instructions should be sent until the later of:
These values are specified in
If the delay, t
selected for READ instructions even if the t
At Power-up, the device is in the following state:
Normal precautions must be taken for supply rail decoupling, to stabilize the V
Each device in a system should have the V
the package pins. (Generally, this capacitor is of the order of 100 nF).
At Power-down, when V
(POR) threshold voltage, V
to any instruction. (The designer needs to be aware that if a Power-down occurs while a
Write, Program or Erase cycle is in progress, some data corruption can result.).
Power up sequencing for Fast program/erase mode: V
is applied.
PUW
V
V
t
t
The device is in the Standby Power mode
The Write Enable Latch (WEL) bit is reset
The Write In Progress (WIP) bit is reset
PUW
VSL
has elapsed after the moment that V
CC
SS
(min) at Power-up, and then for a further delay of t
at Power-down
after V
after V
VSL
CC
, has elapsed, after V
CC
passed the V
passed the V
CC
WI
drops from the operating voltage, to below the Power On Reset
, all operations are disabled and the device does not respond
Table
CC
CC
) until V
WI
Section 3: SPI
(min) level
8.
threshold
CC
has risen above V
CC
CC
CC
PUW
reaches the correct value:
rises above the V
rail decoupled by a suitable capacitor close to
delay is not yet fully elapsed.
modes.
WI
CC
– all operations are disabled, and
should attain V
CC
VSL
(min), the device can be
WI
CC
threshold. However, the
is still below V
CCMIN
CC
before V
CC
supply.
CC
is less
(min).
37/55
PPH

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