M25P64-VME6G NUMONYX, M25P64-VME6G Datasheet - Page 43

• Manufacturer Part Number: M25P64-VME6G
• Description: IC FLASH 64MBIT 50MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P64-VME6G

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 64M (8M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Package: 8VDFPN EP
• Cell Type: NOR
• Density: 64 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 128
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 16.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
5. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are obtained with one
6. V
t
VPPHSL
t
t
t
t
Symbol
t
t
t
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CH
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
PP
CL
SLCH
CHSL
CLQV
CLQX
HLCH
CHHL
sequence including all the Bytes versus several sequences of only a few Bytes. (1 ≤ n ≤ 256).
SHSL
CH
t
t
t
f
f
SE
BE
PPH
W
C
R
(1)
(5)
(1)
+ t
(2)
(2)
(2)
(2)
(2)
(4)
(4)
(6)
should be kept at a valid level until the program/erase operation is completed and result (success or failure) is known.
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
DSU
t
CSH
t
CLH
CSS
t
CLL
t
DIS
HO
f
DH
t
HZ
LZ
AC characteristics
C
V
Clock Frequency for the following instructions: FAST_READ,
PP, SE, BE, RES, WREN, WRDI, RDID, RDSR, WRSR
Clock Frequency for READ instructions
Clock High Time
Clock Low Time
Clock Rise Time
Clock Fall Time
S Active Setup Time (relative to C)
S Not Active Hold Time (relative to C)
Data In Setup Time
Data In Hold Time
S Active Hold Time (relative to C)
S Not Active Setup Time (relative to C)
S Deselect Time
Output Disable Time
Clock Low to Output Valid
Output Hold Time
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup Time
Write Protect Hold Time
Enhanced Program Supply Voltage High to Chip Select Low
Write Status Register Cycle Time
Page Program Cycle Time (256 Bytes)
Page Program Cycle Time (n Bytes)
Page Program Cycle Time (V
Sector Erase Cycle Time
Sector Erase Cycle Time (V
Bulk Erase Cycle Time
Bulk Erase Cycle Time (V
Test conditions specified in
(3)
(3)
(peak to peak)
(peak to peak)
Parameter
C
PP
(max)
PP
= V
PP
= V
PPH
= V
PPH
PPH
)
)
) (256 Bytes)
Table 10
and
Table 12
Min.
D.C.
D.C.
100
100
200
0.1
0.1
20
9
9
5
5
2
5
5
5
0
5
5
5
5
0.4+ n*1/256
Typ.
0.35
1.4
0.5
68
35
5
1
Max.
160
160
50
20
15
8
8
8
8
5
3
MHz
MHz
V/ns
V/ns
Unit
43/55
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
s
s