CY7C1315BV18-167BZCT Cypress Semiconductor Corp, CY7C1315BV18-167BZCT Datasheet - Page 20

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CY7C1315BV18-167BZCT

Manufacturer Part Number
CY7C1315BV18-167BZCT
Description
IC SRAM 18MBIT 167MHZ 165LFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1315BV18-167BZCT

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
18M (512K x 36)
Speed
167MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1315BV18-167BZCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document Number: 38-05620 Rev. *C
Maximum Ratings
(Above which the useful life may be impaired.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied .. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Applied to Outputs in High-Z .........–0.5V to V
DC Input Voltage
Electrical Characteristics
DC Electrical Characteristics
AC Electrical Characteristics
Capacitance
V
V
V
V
V
V
V
V
I
I
V
I
I
V
V
C
C
C
Notes:
Parameter
19. Output are impedance controlled. I
20. Output are impedance controlled. I
21. Power-up: Assumes a linear ramp from 0V to V
22. V
23. Tested initially and after any design or process change that may affect these parameters.
Parameter
Parameter
X
OZ
DD
SB1
DD
DDQ
OH
OL
OH(LOW)
OL(LOW)
IH
IL
REF
IH
IL
IN
CLK
O
REF
(Min.) = 0.68V or 0.46V
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage
V
Automatic Power-down
Current
Input Capacitance
Clock Input Capacitance
Output Capacitance
Input HIGH Voltage
Input LOW Voltage
DD
[23]
[15]
Operating Supply
DD
DDQ
...............................–0.5V to V
Description
Description
Description
Relative to GND........ –0.5V to +2.9V
Relative to GND ...... –0.5V to +V
DDQ
, whichever is larger, V
OH
OL
Over the Operating Range
Over the Operating Range
[15]
[15]
= (V
=
Over the Operating Range
(V
DDQ
[22]
DDQ
/2)/(RQ/5) for values of 175Ω <= RQ <= 350 Ωs.
DD
/2)/(RQ/5) for values of 175Ω <= RQ <= 350 Ωs.
T
V
V
Note 19
Note 20
I
I
GND ≤ V
GND ≤ V
Typical Value = 0.75V
V
f = f
Max. V
Deselected, V
V
f = f
Inputs Static
(min.) within 200 ms. During this time V
OH
OL
A
DD
DDQ
DD
IN
= 25°C, f = 1 MHz,
= 0.1 mA, Nominal Impedance
= −0.1 mA, Nominal Impedance
MAX
MAX
≤ V
= Max., I
= 1.8V
REF
= 1.5V
DDQ
DD
IL
(Max.) = 0.95V or 0.54V
DD
= 1/t
= 1/t
I
I
Test Conditions
, Both Ports
≤ V
≤ V
Test Conditions
+ 0.3V
+ 0.3V
OUT
CYC
CYC
DDQ
DDQ,
IN
DD
≥ V
,
= 0 mA,
[16]
Output Disabled
IH
or
Test Conditions
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch-up Current.................................................... > 200 mA
Operating Range
Com’l
Ind’l
Range
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
DDQ
, whichever is smaller.
IH
< V
DD
Temperature (T
–40°C to +85°C
V
V
and V
0°C to +70°C
DDQ
DDQ
V
V
V
Ambient
DDQ
REF
REF
Min.
–0.3
0.68
V
DDQ
/2 – 0.12
/2 – 0.12
1.7
1.4
Min.
−5
−5
SS
+ 0.1
– 0.2
< V
+ 0.2
DD
.
A
)
Typ.
0.75
1.8
1.5
Typ.
CY7C1313BV18
CY7C1315BV18
1.8 ± 0.1V
CY7C1311BV18
CY7C1911BV18
V
DD
V
V
[21]
DDQ
DDQ
V
V
DDQ
REF
V
V
Max.
Max.
0.95
V
400
450
500
530
550
200
220
240
250
260
REF
1.9
/2 + 0.12
/2 + 0.12
0.2
DDQ
5
6
7
DD
5
5
Max.
Page 20 of 28
– 0.1
+ 0.3
1.4V to V
– 0.2
V
DDQ
[21]
Unit
Unit
Unit
pF
pF
pF
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
DD
V
V
V
V
V
V
V
V
V
V
V
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