CY7C1315BV18-167BZCT Cypress Semiconductor Corp, CY7C1315BV18-167BZCT Datasheet - Page 9

• Manufacturer Part Number: CY7C1315BV18-167BZCT
• Description: IC SRAM 18MBIT 167MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-167BZCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 38-05620 Rev. *C
DLL
These chips utilize a Delay Lock Loop (DLL) that is designed
to function between 80 MHz and the specified maximum clock
frequency. During power-up, when the DOFF is tied HIGH, the
DLL gets locked after 1024 cycles of stable clock. The DLL can
also be reset by slowing or stopping the input clock K and K
for a minimum of 30 ns. However, it is not necessary for the
Application Example
Truth Table
Write Cycle:
Load address on the
rising edge of K; input
write data on two
consecutive K and K
rising edges.
Read Cycle:
Load address on the
rising edge of K; wait
one and a half cycle;
read data on two
consecutive C and C
rising edges.
NOP: No Operation
Standby: Clock
Stopped
Notes:
1. The above application shows four QDR-II being used.
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW,
3. Device will power-up deselected and the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst.
5. “t” represents the cycle at which a Read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line
8. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.
9. This signal was HIGH on previous K clock rise. Initiating consecutive Read or Write operations on consecutive K clock rises is not permitted. The device will
“t” clock cycle.
charging symmetrically.
ignore the second Read or Write request.
Operation
[12, 13, 14, 15, 16, 17]
MASTER
ASIC)
(CPU
BUS
or
CLKIN/CLKIN#
Stopped
Delayed K#
DATA OUT
Delayed K
Source K#
L-H
L-H
L-H
DATA IN
Source K
Address
K
[11]
WPS#
BWS#
RPS#
Vt
RPS WPS
H
L
R
R
H
X
[9]
[8]
R = 50ohms
L
X
H
X
[9]
D
A
↑
represents rising edge.
D(A) at K(t + 1) ↑ D(A + 1) at K(t + 1) ↑ D(A + 2) at K(t + 2) ↑ D(A + 3) at K(t + 2) ↑
Q(A) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑ Q(A + 2) at C(t + 2)↑ Q(A + 3) at C(t + 3) ↑
D = X
Q = High-Z
Previous State
Vt = Vddq/2
R
P
S
#
W
SRAM #1
P
S
#
W
B
#
S
DQ
C C#
CQ/CQ#
K
ZQ
K#
Q
D = X
Q = High-Z
Previous State
R = 250ohms
DLL to be specifically reset in order to lock the DLL to the
desired frequency. The DLL will automatically lock 1024 clock
cycles after a stable clock is presented. The DLL may be
disabled by applying ground to the DOFF pin. For information
refer to the application note ‘DLL Considerations in
QDRII/DDRII/QDRII+/DDRII+.’
DQ
D
A
R
Vt
Vt
D = X
Q = High-Z
Previous State
R
P
#
S
W
SRAM #4
P
S
#
W
B
S
#
DQ
C C#
CQ/CQ#
K
CY7C1313BV18
CY7C1315BV18
CY7C1311BV18
CY7C1911BV18
ZQ
K#
Q
R = 250ohms
D = X
Q = High-Z
Previous State
Page 9 of 28
DQ
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