CY7C1315BV18-167BZCT Cypress Semiconductor Corp, CY7C1315BV18-167BZCT Datasheet - Page 24

• Manufacturer Part Number: CY7C1315BV18-167BZCT
• Description: IC SRAM 18MBIT 167MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-167BZCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 38-05620 Rev. *C
Switching Waveforms
Read/Write/Deselect Sequence
Notes:
30. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0+1.
31. Output are disabled (High-Z) one clock cycle after a NOP.
32. In this example, if address A2 = A1, then data Q20 = D10 and Q21 = D11. Write data is forwarded immediately as read results. This note applies to the whole
WPS
RPS
diagram.
CQ
CQ
D
K
A
K
Q
C
C
NOP
t KHCH
1
t KH
t KL
t
t SA
SC
A0
READ
2
t HC
t HA
[30, 31, 32]
t KHCH
t
CYC
t CYC
A1
WRITE
3
t KHKH
t CLZ
t
KHKH
t
SD
t CQOH
D10
A2
Q00
READ
4
t CQOH
t HD
D11
Q01
t CO
t CCQO
t
t
DOH
SC
D12
t SD
A3
Q02
WRITE
5
t CCQO
t HC
DON’T CARE
D13
Q03
t CQDOH
t HD
D30
NOP
6
Q20
t
KH
D31
CY7C1313BV18
CY7C1315BV18
CY7C1311BV18
CY7C1911BV18
Q21
t CQD
t KL
D32
UNDEFINED
7
Q22
t CHZ
Page 24 of 28
D33
Q23
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