CY7C1315BV18-167BZCT Cypress Semiconductor Corp, CY7C1315BV18-167BZCT Datasheet - Page 28

• Manufacturer Part Number: CY7C1315BV18-167BZCT
• Description: IC SRAM 18MBIT 167MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-167BZCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 38-05620 Rev. *C
Document History Page
Document Title: CY7C1311BV18/CY7C1911BV18/CY7C1313BV18/CY7C1315BV18 18-Mbit QDR™-II SRAM 4-Word
Burst Architecture
Document Number: 38-05620
REV.
*A
*B
*C
**
ECN No.
252474
325581
413997
472384
Issue Date
See ECN
See ECN
See ECN
See ECN
Change
Orig. of
NXR
NXR
SYT
SYT
New data sheet
Removed CY7C1911BV18 from the title
Included 300-MHz Speed Bin
Added Industrial Temperature Grade
Replaced TBDs for I
Replaced the TBDs on the Thermal Characteristics Table to Θ
and Θ
Replaced TBDs in the Capacitance Table for the 165 FBGA Package
(13 x 15 x 1.4 mm)
Added Lead-Free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per
availability
Converted from Preliminary to Final
Added CY7C1911BV18 to the title
Added 278-MHz speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed C/C Description in the features section
Added power-up sequence details and waveforms
Added foot notes# 17, 18, 19 on page# 19
Changed the description of I
Current on page# 20
Modified the I
Modified test condition in Footnote # 22 on page# 20 from V
V
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
Modified the ZQ Definition from Alternately, this pin can be connected directly
to V
Included Maximum Ratings for Supply Voltage on V
Changed the Maximum Ratings for DC Input Voltage from V
Changed t
t
Switching Characteristics table
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied
from –10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table
Changed the package diagram from BB165E (15 x 17 x 1.4 mm) to BB165D
TDIH
DDQ
DD
, t
JC
< V
CH
to Alternately, this pin can be connected directly to V
= 5.91°C/W
DD
from 10 ns to 5 ns and changed t
TH
and t
DD
and I
TL
DD
from 40 ns to 20 ns, changed t
SB
and I
values
Description of Change
X
SB1
from Input Load Current to Input Leakage
specs
TDOV
from 20 ns to 10 ns in TAP AC
CY7C1313BV18
CY7C1315BV18
CY7C1311BV18
CY7C1911BV18
DDQ
TMSS
Relative to GND
, t
TDIS
DDQ
DDQ
DDQ
JA
, t
Page 28 of 28
= 28.51°C/W
< V
to V
CS
, t
DD
DD
TMSH
to
,
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