CY7C1315BV18-167BZCT Cypress Semiconductor Corp, CY7C1315BV18-167BZCT Datasheet - Page 21

• Manufacturer Part Number: CY7C1315BV18-167BZCT
• Description: IC SRAM 18MBIT 167MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-167BZCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 38-05620 Rev. *C
AC Test Loads and Waveforms
Thermal Resistance
Note:
24. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, V
Parameter
pulse levels of 0.25V to 1.25V, and output loading of the specified I
Θ
OUTPUT
Θ
Device
Under
Test
JA
JC
V
REF
ZQ
(a)
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Z
RQ =
250Ω
Description
0.75V
0
= 50Ω
[23]
V
REF
R
L
= 0.75V
= 50Ω
Test conditions follow standard test methods and procedures for
measuring thermal impedance, per EIA/JESD51.
Device
Under
Test
OUTPUT
V
REF
ZQ
OL
/I
OH
0.75V
RQ =
250Ω
(b)
and load capacitance shown in (a) of AC Test Loads.
V
Test Conditions
REF
= 0.75V
R = 50Ω
5 pF
0.25V
1.25V
Slew Rate = 2 V/ns
ALL INPUT PULSES
0.75V
CY7C1313BV18
CY7C1315BV18
CY7C1311BV18
CY7C1911BV18
165 FBGA
Package
28.51
5.91
DDQ
Page 21 of 28
[24]
= 1.5V, input
°C/W
°C/W
Unit
[+] Feedback