M58BW016FB7T3T

Manufacturer Part NumberM58BW016FB7T3T
DescriptionIC FLASH 16MBIT 70NS 80PQFP
ManufacturerNUMONYX
M58BW016FB7T3T datasheet
 

Specifications of M58BW016FB7T3T

Format - MemoryFLASHMemory TypeFLASH
Memory Size16M (512K x 32)Speed70ns
InterfaceParallelVoltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 125°CPackage / Case80-MQFP, 80-PQFP
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther namesM58BW016FB7T3TCT
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DC and AC parameters
7
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 13: Operating and AC measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 13.
Operating and AC measurement conditions
Supply voltage (V
DD
Input/output supply voltage (V
Ambient temperature (T
Load capacitance (C
Clock rise and fall times
Input rise and fall times
Input pulses voltages
Input and output timing ref. voltages
Figure 6.
AC measurement input/output waveform
1. V
= V
.
DD
DDQ
38/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
conditions. Designers should check that the
Parameter
)
)
DDQ
Grade 6
)
A
Grade 3
)
L
V DDQ
V DDQIN
0 V
Value
Units
Min
Max
2.7
3.6
V
2.4
V
V
DD
–40
90
°C
–40
125
°C
30
pF
4
ns
4
ns
0 to V
V
DDQ
V
/2
V
DDQ
V DDQ /2
V DDQIN /2
AI04153