L6385D STMicroelectronics, L6385D Datasheet - Page 4

• Manufacturer Part Number: L6385D
• Description: IC DRIVER HIGH/LOW SIDE 8-SOIC
• Manufacturer: STMicroelectronics
• Type: Driverr

Specifications of L6385D

• Configuration: Half Bridge
• Input Type: Non-Inverting
• Delay Time: 110ns
• Current - Peak: 400mA
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 600V
• Voltage - Supply: 17V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rise Time: 50 ns
• Fall Time: 30 ns
• Supply Current: 0.32 mA
• Maximum Power Dissipation: 750 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 45 C
• Number Of Drivers: 2
• For Use With: 497-5492 - EVAL BOARD FOR L6384/L6385/L6386
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-1435-5; 497-1435-5; 497-3650-5

L6385
Figure 1. Input/Output Timing Diagram
Figure 2. Typical Rise and Fall Times vs.
BOOTSTRAP DRIVER
A bootstrap circuitry is needed to supply the high
voltage section. This function is normally accom-
plished by a high voltage fast recovery diode (fig.
4a). In the L6385 a patented integrated structure
replaces the external diode. It is realized by a
high voltage DMOS, driven synchronously with
the low side driver (LVG), with in series a diode,
as shown in fig. 4b
An internal charge pump (fig. 4b) provides the
DMOS driving voltage .
The diode connected in series to the DMOS has
been added to avoid undesirable turn on of it.
CBOOT selection and charging:
To choose the proper C
MOS can be seen as an equivalent capacitor.
4/9
(nsec)
time
250
200
150
100
50
0
For both high and low side buffers @25˚C Tamb
0
Load Capacitance
1
HVG
LVG
HIN
2
LIN
BOOT
3
value the external
4
Tr
Tf
5
D99IN1054
C (nF)
gate charge :
3nF. With
Figure 3. Quiescent Current vs. Supply
This capacitor C
The ratio between the capacitors C
is proportional to the cyclical voltage loss .
It has to be:
e.g.: if Q
300mV.
If HVG has to be supplied for a long time, the
C
( A)
10
10
10
10
Iq
BOOT
4
3
2
0
selection has to take into account also the
2
gate
Voltage
C
BOOT
4
is 30nC and V
C
EXT
BOOT
C
6
D99IN1053
= 100nF the drop would be
EXT
is related to the MOS total
>>>C
8
Q
V
10
gate
gate
EXT
gate
12
is 10V, C
EXT
14
and C
D99IN1055
16 V
EXT
BOOT
S
(V)
is