VN5050J-E STMicroelectronics, VN5050J-E Datasheet
VN5050J-E
Specifications of VN5050J-E
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VN5050J-E Summary of contents
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... Application ■ All types of resistive, inductive and capacitive loads Description The VN5050J monolithic device made using STMicroelectronics VIPower technology intended for driving resistive or inductive loads with one side connected to ground. Active V voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table) ...
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... Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.1 PowerSSO-12™ thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 5.1 ECOPACK 5.2 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 5.3 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 2/31 Solution 1: resistor in the ground line (RGND only Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 21 ® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 VN5050J-E ...
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... VN5050J-E List of tables Table 2. Pin function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 3. Suggested connections for unused and N.C. pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 4. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 5. Thermal data Table 6. Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 7. Switching (VCC = 13V 25° Table 8. Status pin (V =0V Table 9. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 10. Openload detection Table 11. Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 12 ...
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... Figure 32. PowerSSO-12™ thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . 25 Figure 33. Thermal fitting model of a single channel HSD in PowerSSO-12™ Figure 34. PowerSSO-12™ package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 35. PowerSSO-12™ tube shipment (no suffix Figure 36. PowerSSO-12™ tape and reel shipment (suffix “TR” 4/ VN5050J-E ...
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... VN5050J-E 1 Block diagram and pin description Figure 1. Block diagram GND INPUT STATUS STAT_DIS Table 2. Pin function Name V Battery connection. CC OUTPUT Power output. Ground connection. Must be reverse battery protected by an external diode/resistor GND network. Voltage controlled input pin with hysteresis, CMOS compatible. Controls output INPUT switch state ...
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... Suggested connections for unused and N.C. pins Connection / Pin Floating To ground (1) Not recommended. 6/31 N. GND INPUT STATUS 6 N.C. PowerSSO-12 STATUS N.C. OUTPUT X X (1) N.R. X N.R. VN5050J-E TAB = V cc N.C. OUTPUT OUTPUT 9 OUTPUT 8 OUTPUT 7 N.C. INPUT STAT_DIS X X Through 10KΩ Through 10KΩ resistor resistor X ...
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... VN5050J-E 2 Electrical specifications Figure 3. Current and voltage conventions Note during reverse battery condition. F OUT CC 2.1 Absolute maximum ratings Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied ...
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... Thermal data Table 5. Thermal data Symbol Thermal resistance junction-case (Max.) R thj-case (with one channel ON) R Thermal resistance junction-ambient (Max.) thj-amb 8/31 Parameter Parameter VN5050J-E Value Unit 750 V -40 to 150 ° 150 °C Value Unit 2.7 °C/W See Figure 31 °C/W ...
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... VN5050J-E 2.3 Electrical characteristics Values specified in this section are for 8V<V specified. Table 6. Power section Symbol V Operating supply voltage CC V Undervoltage shutdown USD Undervoltage shut-down V USDhyst hysteresis R On state resistance ON V Clamp voltage clamp I Supply current S Off state output I L(off1) current ...
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... V OUT 0.1A; OUT T = -40°C...+150°C j (see Figure 6) Min. Typ. =0V SD =5V, SD =5V, SD 5.5 -0.7 Min. Typ. 13 150 175 135 7 Figure 4) =0; L=6mH V - VN5050J-E Max. Unit 0 µA 100 Max. Unit 26 200 °C °C °C °C 20 µs - ...
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... VN5050J-E Table 10. Openload detection Symbol Openload On State I OL detection threshold Openload On State t DOL(on) detection delay Delay between INPUT falling edge and STATUS t POL rising edge in Openload condition Openload Off State V voltage detection OL threshold Output short circuit detection delay at DSTKON CC turn Off Table 11 ...
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... POL CC > I OUT OL V > V OUT OL t DSTKON INPUT OPEN LOAD STATUS TIMING (with external pull-up) I < OUT STAT t DOL(on) OVER TEMP STATUS TIMING T > TSD STAT t SDL OUTPUT STATUS ( after INPUT falling edge. POL VN5050J-E V > V OUT OL t SDL (1) =0V ( ...
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... VN5050J-E Figure 5. Switching characteristics V OUT dV INPUT Figure 6. Output voltage drop limitation t Won 80% /dt OUT (on) 10 d(on out o T =150 on(T) Electrical specifications t Woff 90% dV /dt OUT (off d(off = =- out t t 13/31 ...
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... Test level results III Burst cycle/pulse repetition time 0 0 100 100 ms ( 13.5V except for pulse 5b. CC Contents VN5050J-E Delays and Impedance 2 ms, 10 Ω 50 µs, 2 Ω 0.1 µs, 50 Ω 0.1 µs, 50 Ω 100 ms, 0.01Ω 400 ms, 2 Ω ...
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... VN5050J-E Figure 7. Waveforms INPUT STAT_DIS LOAD CURRENT STATUS V CC INPUT STAT_DIS LOAD CURRENT STATUS INPUT STAT_DIS LOAD VOLTAGE STATUS INPUT STAT_DIS LOAD VOLTAGE LOAD CURRENT STATUS INPUT STAT_DIS LOAD VOLTAGE STATUS T j INPUT STAT_DIS LOAD CURRENT STATUS NORMAL OPERATION UNDERVOLTAGE V USDhyst ...
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... Figure 13. Input hysteresis voltage Vihyst (V) 2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 100 125 150 175 -50 VN5050J-E High level input current Vin= 2.1V - 100 125 150 Tc (° 100 125 150 Tc (° 100 125 150 Tc (° ...
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... VN5050J-E Figure 14. Status low output voltage Vstat (V) 0.9 0.8 I stat= 1.6mA 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -50 - (°C ) Figure 15. Status leakage current Ilstat (uA) 0.055 0.05 Vstat= 5V 0.045 0.04 0.035 0.03 0.025 -50 - (°C ) Figure 17. Status clamp voltage Vscl (V) 9 8.5 ...
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... Figure 22. Undervoltage shutdown Vusd ( 100 125 150 175 -50 Figure 24. STAT_DIS clamp voltage Vsdcl( 100 125 150 175 -50 VN5050J LIM case Vcc= 13V - 100 125 150 Tc (° 100 125 150 Tc (° sd= 1mA - 100 125 150 Tc (°C ) 175 175 ...
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... VN5050J-E Figure 25. High level STAT_DIS voltage Vsdh( -50 - (°C ) Figure 26. Low level STAT_DIS voltage Vsdl( 100 125 150 175 -50 Electrical specifications - 100 125 150 Tc (°C ) 175 19/31 ...
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... STAT_DIS prot R INPUT prot STATUS R prot V GND ). S(on)max ) / (-I ) GND (when V <0: during reverse battery situations) is: GND the input thresholds and the status output S(on)max GND . GND VN5050J OUTPUT GND R GND D GND only) GND resistor. GND becomes the sum of the S(on)max D ld ...
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... VN5050J-E 3.1.2 Solution 2: diode (D A resistor (R =1kΩ) should be inserted in parallel to D GND inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network will produce a shift (≈ 600mV) in the input threshold and in the status output values if the microprocessor ground is not common to the device ground ...
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... Application information The values of V OLmin section. Figure 28. Open load detection in Off state 22/ and I are available in the Electrical characteristics OLmax L(off2) V batt DRI VER INP UT + LOGI TATUS ROUND VN5050J L(off2) OUT R L ...
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... VN5050J-E 3.5 Maximum demagnetization energy (V Figure 29. Maximum turn Off current versus inductance 100 0 jstart B: T jstart C: T jstart Note: Values are generated with R demagnetization) of every pulse must not exceed the temperature specified above for curves A and (mH) = 150°C single pulse = 100°C repetitive pulse = 125° ...
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... Cu thickness=70 µm (front and back side), Copper areas: from minimum pad lay-out to 8cm Figure 31. R thj-amb RTHj_amb(°C/ 24/31 and Z measurements (PCB: Double layer, Thermal Vias, FR4 Vs. PCB copper area in open box free air condition 2 4 PCB Cu heatsink area (cm^2) VN5050J ...
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... VN5050J-E Figure 32. PowerSSO-12™ thermal impedance junction ambient single pulse ZTH (°C/W) 100 10 1 0,1 0,001 Equation 1: pulse calculation formula ⋅ Z THδ where δ Figure 33. Thermal fitting model of a single channel HSD in PowerSSO-12™ (a )The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded protections (power limitation or thermal cycling during thermal shutdown) are not triggered ...
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... Package and PCB thermal data Table 14. Thermal parameter Area/island (cm R1 (°C/W) R2 (°C/W) R3 (°C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1 (W.s/°C) C2 (W.s/°C) C3 (W.s/°C) C4 (W.s/°C) C5 (W.s/°C) C6 (W.s/°C) 26/ Footprint 0.7 2 0.001 0.0025 0.0166 0.2 0.27 3 VN5050J 0.1 0.1 0 ...
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... VN5050J-E 5 Package and packing information ® 5.1 ECOPACK In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second-level interconnect. The category of Second-Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ...
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... Table 15. PowerSSO-12™ mechanical data Symbol ddd 28/31 Millimeters Min. Typ. 1.250 0.000 1.100 0.230 0.190 4.800 3.800 0.800 5.800 0.250 0.400 0° 2.200 2.900 VN5050J-E Max. 1.620 0.100 1.650 0.410 0.250 5.000 4.000 6.200 0.500 1.270 8° 2.800 3.500 0.100 ...
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... VN5050J-E 5.3 Packing information Figure 35. PowerSSO-12™ tube shipment (no suffix) A Figure 36. PowerSSO-12™ tape and reel shipment (suffix “TR”) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter ...
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... Table 14: Thermal R1 value changed from 0.6 to 0.7 °C/W. R3 value changed from 6 °C/W. R4 values changed from 10 / °C/W. C3 value changed from 0.022 to 0.0166 W.s/°C. VN5050J-E Changes updated: pins 1-6-7- ratings: E entries updated. MAX :Test level values III : slug dimensions view): added note ...
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... VN5050J-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...