ISL6559CRZ-TR5265 Intersil, ISL6559CRZ-TR5265 Datasheet - Page 14

• Manufacturer Part Number: ISL6559CRZ-TR5265
• Description: IC PWM CTRLR 2-4PHASE 32-QFN
• Manufacturer: Intersil

Specifications of ISL6559CRZ-TR5265

• Pwm Type: Voltage Mode
• Number Of Outputs: 1
• Frequency - Max: 4MHz
• Duty Cycle: 75%
• Voltage - Supply: 4.75 V ~ 5.25 V
• Buck: Yes
• Boost: No
• Flyback: No
• Inverting: No
• Doubler: No
• Divider: No
• Cuk: No
• Isolated: No
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
• Frequency-max: 4MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Stages
The first step in designing a multi-phase converter is to
determine the number of phases. This determination
depends heavily on the cost analysis which in turn depends
on system constraints that differ from one design to the next.
Principally, the designer will be concerned with whether
components can be mounted on both sides of the circuit
board; whether through-hole components are permitted; and
the total board space available for power-supply circuitry.
Generally speaking, the most economical solutions are
those where each phase handles between 15 and 20A. All
surface-mount designs will tend toward the lower end of this
current range and, if through-hole MOSFETs can be used,
higher per-phase currents are possible. In cases where
board space is the limiting constraint, current can be pushed
as high as 30A per phase, but these designs require heat
sinks and forced air to cool the MOSFETs.
MOSFETS
The choice of MOSFETs depends on the current each
MOSFET will be required to conduct; the switching frequency;
the capability of the MOSFETs to dissipate heat; and the
availability and nature of heat sinking and air flow.
LOWER MOSFET POWER CALCULATION
The calculation for heat dissipated in the lower MOSFET is
simple, since virtually all of the heat loss in the lower
MOSFET is due to current conducted through the channel
resistance (r
continuous output current; I
current (see Equation 1); d is the duty cycle (V
L is the per-channel inductance.
An additional term can be added to the lower-MOSFET loss
equation to account for additional loss accrued during the
dead time when inductor current is flowing through the
lower-MOSFET body diode. This term is dependent on the
diode forward voltage at I
f
beginning and the end of the lower-MOSFET conduction
interval respectively.
Thus the total maximum power dissipated in each lower
MOSFET is approximated by the summation of P
UPPER MOSFET POWER CALCULATION
In addition to r
MOSFET losses are due to currents conducted across the
input voltage (V
higher portion of the upper-MOSFET losses are dependent
on switching frequency, the power calculation is more
P
P
S
L
D
; and the length of dead times, t
=
=
r
V
DS ON
D ON
(
(
DS(ON)
)
)
f
S
DS(ON)



I
----- -
IN
N
M


I
----- -



) during switching. Since a substantially
N
M
2
). In Equation 13, I
(
+
1 d
I
-------- -
losses, a large portion of the upper-
–
PP
2
M
)
 t

+
, V
d1
PP
I
--------------------------------
L PP
14
D(ON)
,
+
2
is the peak-to-peak inductor



12
(
I
----- -
N
d1
M
1 d
; the switching frequency,
–
–
and t
I
-------- -
PP
M
)
2



is the maximum
d2
t
d2
, at the
OUT
L
/V
and P
IN
(EQ. 13)
(EQ. 14)
); and
D
.
ISL6559
complex. Upper MOSFET losses can be divided into
separate components involving the upper-MOSFET
switching times; the lower-MOSFET body-diode reverse-
recovery charge, Q
conduction loss.
When the upper MOSFET turns off, the lower MOSFET does
not conduct any portion of the inductor current until the
voltage at the phase node falls below ground. Once the
lower MOSFET begins conducting, the current in the upper
MOSFET falls to zero as the current in the lower MOSFET
ramps up to assume the full inductor current. In Equation 15,
the required time for this commutation is t
approximated associated power loss is P
The upper MOSFET begins to conduct and this transition
occurs over a time t
loss is P
A third component involves the lower MOSFET’s reverse-
recovery charge, Q
commutated to the upper MOSFET before the lower-
MOSFET’s body diode can draw all of Q
through the upper MOSFET across VIN. The power
dissipated as a result is P
Finally, the resistive part of the upper MOSFET’s is given in
Equation 18 as P
In this case, of course, r
upper MOSFET.
The total power dissipated by the upper MOSFET at full load
can now be approximated as the summation of the results
from Equations 15, 16, 17 and 18. Since the power
equations depend on MOSFET parameters, choosing the
correct MOSFETs can be an iterative process that involves
repetitively solving the loss equations for different MOSFETs
and different switching frequencies until converging upon the
best solution.
Current Sensing
The ISEN pins are denoted ISEN1, ISEN2, ISEN3 and
ISEN4. The resistors connected between these pins and
their respective phase nodes determine the gains in the
load-line regulation loop and the channel-current balance
P
P
P
P
UP 1 ,
UP 2 ,
UP 3 ,
UP 4 ,
≈
≈
≈
=
V
r
V
UP,2
DS ON
V
IN
IN
IN
(





I
----- -
Q
N
.
I
----- -
N
M
M
rr
)
+
–
f
S



I
-------- -
I
-------- -
UP,4
PP
PP
I
----- -
2
2
N
M
rr
2
rr



 t

 t


. In Equation 16, the approximate power
. Since the inductor current has fully
; and the upper MOSFET r
2






.
d
----
----
2
2
2
1
+



DS(ON)



I
--------- -
f
f
UP,3
PP
12
S
S
2
and is approximately
is the on resistance of the
rr
UP,1
1
, it is conducted
and the
.
December 29, 2004
DS(ON)
(EQ. 15)
(EQ. 16)
(EQ. 17)
(EQ. 18)
FN9084.8