MT36VDDF25672Y-335D2 Micron Technology Inc, MT36VDDF25672Y-335D2 Datasheet - Page 15

• Manufacturer Part Number: MT36VDDF25672Y-335D2
• Description: MODULE SDRAM DDR 2GB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36VDDF25672Y-335D2

• Memory Type: DDR SDRAM
• Memory Size: 2GB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 3.24A
• Number Of Elements: 36
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 12: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear following parameter tables; 0°C
Table 13: AC Input Operating Conditions
Notes: 1–5, 14, 48; notes appear following parameter tables; 0°C
pdf: 09005aef80772fd2, source: 09005aef8075ebf6
DDF36C128_256x72G.fm - Rev. D 9/04 EN
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V
1.35V (All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
PARAMETER/CONDITION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to V
Relative to V
Relative to V
OUT
OUT
V
REF
DD
DD
IN
= 0.373V, maximum V
SS
SS
SS
Q Supply
= V
Supply
and Inputs
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
V
DD
DD
V
Q - 0.373V, minimum V
, V
OUT
REF
V
pin 0V
DD
Q)
REF
V
IN
, maximum V
REF
Command/
Address, RAS#,
CAS#, WE#, S0#,
CKE0
CK, CK#
DQ, DQS
, minimum V
SYMBOL
V
V
V
REF
IH
IL
(
(
TT
AC
(
AC
AC
)
)
)
)
15
TT
)
T
A
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
SYMBOL
V
0.49
T
V
V
Voltage on I/O Pins
Operating Temperature,
Storage Temperature (plastic) . . . . . .-55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
+70°C
A
REF
V
IH
V
IL
V
V
I
I
I
DDQ
OH
REF
(DC)
OZ
OL
Relative to V
T
(DC)
DD
I
MIN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TT
I
X
+70°C; V
+ 0.310
A
–
V
(ambient) . . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
DD
0.49
Q
V
V
REF
REF
1GB, 2GB (x72, ECC, DR)
DD
-16.8
MIN
16.8
-0.3
-10
-10
2.3
2.3
X
-5
+ 0.15
- 0.04
0.51
= V
V
V
SS
REF
DD
184-PIN DDR RDIMM
MAX
DD
. . . . . . . . . . . . -0.5V to V
Q 0.51
X
- 0.310
–
Q = +2.5V ±0.2V
V
DD
V
V
V
REF
REF
Q
DD
MAX
2.7
2.7
X
10
10
©2004 Micron Technology, Inc. All rights reserved.
+ 0.04
5
–
–
- 0.15
+ 0.3
V
DD
UNITS
Q
V
V
V
UNITS
mA
mA
µA
µA
V
V
V
V
V
V
12, 25, 35
12, 25, 35
NOTES
DD
32, 36, 39
NOTES
6
32, 36
33, 34
Q +0.5V
6, 39
7, 39
25
25
47
47