EVK-DS40MB200 National Semiconductor, EVK-DS40MB200 Datasheet - Page 8

• Manufacturer Part Number: EVK-DS40MB200
• Description: BOARD EVALUATION DS40MB200
• Manufacturer: National Semiconductor

Specifications of EVK-DS40MB200

• Main Purpose: Interface, 2:1 Multiplexer
• Utilized Ic / Part: DS40MB200
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Secondary Attributes: -
• Embedded: -
• Primary Attributes: -

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LVCMOS DC SPECIFICATIONS
V
V
I
I
R
RECEIVER SPECIFICATIONS
V
V
R
DRIVER SPECIFICATIONS
VODB
IH
IL
Symbol
IH
IL
ID
ICM
PU
ITD
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Supply Voltage (V
CMOS/TTL Input Voltage
CML Input/Output Voltage
Junction Temperature
Storage Temperature
Lead Temperature
Thermal Resistance, θ
Thermal Resistance, θ
Soldering, 4 sec
High Level Input
Voltage
Low Level Input
Voltage
High Level Input
Current
Low Level Input Current V
Pull-High Resistance
Differential Input
Voltage Range
Common Mode Voltage
at Receiver Inputs
Input Differential
Termination
Output Differential
Voltage Swing without
Pre-Emphasis
Parameter
CC
)
JA
JC-top
V
AC Coupled Differential Signal
Below 1.25 Gbps
At 1.25 Gbps–3.125 Gbps
Above 3.125 Gbps
This parameter is not production tested.
Measured at receiver inputs reference to ground.
On-chip differential termination between IN+ or IN
−.
R
PRES_1=PRES_0=0
PREL_1=PREL_0=0
Driver pre-emphasis disabled.
Running K28.7 pattern at 4 Gbps.
See Figure 5 for test circuit.
IN
IN
L
= 100Ω ±1%
= V
= GND
CC
−65°C to +150°C
(Note 1)
(V
(V
−0.3V to 4V
CC
CC
33.7°C/W
20.7°C/W
−0.3V to
−0.3V to
+125°C
+260°C
+0.3V)
+0.3V)
Conditions
8
Recommended Operating Ratings
Thermal Resistance, θ
Thermal Resistance,Φ
ESD Rating HBM, 1.5 kΩ, 100 pF
ESD Rating Machine Model
Supply Voltage
(V
Supply Noise Amplitude
Ambient Temperature
Case Temperature
CC
10 Hz to 2 GHz
-GND)
1000
−0.3
Min
−10
100
100
100
2.0
75
84
JB
JC-bottom
(Note 2)
3.135
1200
Min
Typ
100
1.3
94
35
0
Typ
3.3
V
CC
1750
1560
1200
1400
Max
124
116
0.8
10
3.465
+0.3
Max
100
20
85
18.2°C/W
5.8°C/W
Units
mV
mV
mV
mV
mV
Units
250V
°C
°C
V
6 kV
kΩ
µA
µA
Ω
V
V
V
PP
P-P
P-P
P-P
P-P