IRF6610 International Rectifier, IRF6610 Datasheet
IRF6610
Specifications of IRF6610
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IRF6610 Summary of contents
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... The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. ...
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... IRF6610 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...
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... Ci= τi/Ri 0.0001 0.001 0. Rectangular Pulse Duration (sec) T measured with thermocouple incontact with top (Drain) of part measured at θ Mounted to a PCB with small clip heatsink (still air) IRF6610 Max. 2.2 1.4 42 270 - 150 Typ. Max. ––– 58 12.5 ––– ...
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... IRF6610 1000 100 10 1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 2.5V 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 10V ≤60µs PULSE WIDTH 100 150° 25° -40° Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics 10000 0V MHZ C iss = SHORTED ...
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... OPERATION IN THIS AREA LIMITED (on) 100 25° 150°C Single Pulse 0.1 0.10 1.00 10. Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.5 2 250µA 1.5 1.0 -75 -50 - 100 125 150 Temperature ( °C ) Temperature TOP 3.6A 5.3A 125 150 IRF6610 100µsec 1msec 10msec 100.00 5 ...
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... IRF6610 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16b. Unclamped Inductive Test Circuit Pulse Width < 1µs Duty Factor < 0.1% Fig 17a. Switching Time Test Circuit ...
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... D.U.T. I Reverse Recovery - Current + D.U. Re-Applied G + Voltage Inductor Current - Inductor Curent * V GS ® HEXFET Power MOSFETs IRF6610 P.W. Period D = Period Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ for Logic Level Devices * V =10V GS ...
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... IRF6610 DirectFET™ Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL CODE MAX ...
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... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6610). For 1000 parts on 7" reel, order IRF6610TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...