IRF6610 International Rectifier, IRF6610 Datasheet

MOSFET N-CH 20V 15A DIRECTFET

IRF6610

Manufacturer Part Number
IRF6610
Description
MOSFET N-CH 20V 15A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6610

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.55V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1520pF @ 10V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric SQ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6610TR1PBF
Manufacturer:
IR
Quantity:
6 231
Description
The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6610 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Notes:
www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AR
DS
GS
AS
Lead and Bromide Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
application
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
SQ
30
25
20
15
10
A
A
C
5
0
= 25°C
= 70°C
= 25°C
3
Fig 1. Typical On-Resistance vs. Gate Voltage
SX
4
V GS, Gate -to -Source Voltage (V)
5
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
T J = 25°C
ST
6
7
T J = 125°C
8
Parameter
I D = 15A
9
GS
GS
GS
MQ
@ 10V
@ 10V
@ 10V
10
MX
Typical values (unless otherwise specified)
20V max ±20V max 5.2mΩ@ 10V 8.2mΩ@ 4.5V
Q
11nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
C
g tot
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
DSS
measured with thermocouple mounted to top (Drain) of part.
6.0
5.0
4.0
3.0
2.0
1.0
0.0
MT
0
J
3.6nC
= 25°C, L = 0.18mH, R
I D = 12A
Q
gd
2
V
GS
DirectFET™ Power MOSFET
MP
SQ
Q G Total Gate Charge (nC)
4
1.3nC
Q
gs2
6
V DS = 16V
V DS = 10V
Max.
120
±20
20
15
12
66
13
12
R
DS(on)
G
6.4nC
8
Q
= 25Ω, I
TM
rr
IRF6610
packaging to achieve the
10
DirectFET™ ISOMETRIC
AS
5.9nC
Q
= 12A.
12
oss
R
PD - 97012
14
DS(on)
Units
V
mJ
2.1V
V
A
A
05/25/05
gs(th)
16
1

Related parts for IRF6610

IRF6610 Summary of contents

Page 1

... The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket. ...

Page 2

... IRF6610 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

... Ci= τi/Ri 0.0001 0.001 0. Rectangular Pulse Duration (sec) T measured with thermocouple incontact with top (Drain) of part measured at θ Mounted to a PCB with small clip heatsink (still air) IRF6610 Max. 2.2 1.4 42 270 - 150 Typ. Max. ––– 58 12.5 ––– ...

Page 4

... IRF6610 1000 100 10 1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 2.5V 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 10V ≤60µs PULSE WIDTH 100 150° 25° -40° Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics 10000 0V MHZ C iss = SHORTED ...

Page 5

... OPERATION IN THIS AREA LIMITED (on) 100 25° 150°C Single Pulse 0.1 0.10 1.00 10. Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.5 2 250µA 1.5 1.0 -75 -50 - 100 125 150 Temperature ( °C ) Temperature TOP 3.6A 5.3A 125 150 IRF6610 100µsec 1msec 10msec 100.00 5 ...

Page 6

... IRF6610 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16b. Unclamped Inductive Test Circuit Pulse Width < 1µs Duty Factor < 0.1% Fig 17a. Switching Time Test Circuit ...

Page 7

... D.U.T. I Reverse Recovery - Current + D.U. Re-Applied G + Voltage Inductor Current - Inductor Curent * V GS ® HEXFET Power MOSFETs IRF6610 P.W. Period D = Period Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ for Logic Level Devices * V =10V GS ...

Page 8

... IRF6610 DirectFET™ Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL CODE MAX ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6610). For 1000 parts on 7" reel, order IRF6610TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords