ISL6609 INTERSIL [Intersil Corporation], ISL6609 Datasheet

no-image

ISL6609

Manufacturer Part Number
ISL6609
Description
Synchronous Rectified MOSFET Driver
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ISL6609ACBZ
Manufacturer:
KIONIX
Quantity:
1
Part Number:
ISL6609ACBZ
Manufacturer:
INTERSIL
Quantity:
20 000
Part Number:
ISL6609ACBZ-T
Manufacturer:
TI
Quantity:
50
Company:
Part Number:
ISL6609ACBZ-T
Quantity:
1 751
Company:
Part Number:
ISL6609ACBZ-T
Quantity:
1 751
Part Number:
ISL6609ACRZ-T
Manufacturer:
INTERSIL
Quantity:
20 000
Part Number:
ISL6609AIBZ-T
Manufacturer:
INTERSIL
Quantity:
20 000
Part Number:
ISL6609AIRZ-T
Manufacturer:
INTERSIL
Quantity:
20 000
Company:
Part Number:
ISL6609AIRZ-T
Quantity:
100
Part Number:
ISL6609CRZ-T
Manufacturer:
INTERSIL
Quantity:
20 000
Part Number:
ISL6609IBZ
Manufacturer:
INTERSIL/PBF
Quantity:
16
Part Number:
ISL6609IBZ
Manufacturer:
INTERSIL
Quantity:
63
Synchronous Rectified MOSFET Driver
The ISL6609, ISL6609A is a high frequency, MOSFET driver
optimized to drive two N-Channel power MOSFETs in a
synchronous-rectified buck converter topology. This driver
combined with an Intersil ISL63xx or ISL65xx multiphase
PWM controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3nF load with less than
10ns rise/fall time. Bootstrapping of the upper gate driver is
implemented via an internal low forward drop diode,
reducing implementation cost, complexity, and allowing the
use of higher performance, cost effective N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
The ISL6609, ISL6609A features 4A typical sink current for
the lower gate driver, enhancing the lower MOSFET gate
hold-down capability during PHASE node rising edge,
preventing power loss caused by the self turn-on of the lower
MOSFET due to the high dV/dt of the switching node.
The ISL6609, ISL6609A also features an input that
recognizes a high-impedance state, working together with
Intersil multiphase PWM controllers to prevent negative
transients on the controlled output voltage when operation is
suspended. This feature eliminates the need for the schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage. In addition, the
ISL6609A’s bootstrap function is designed to prevent the
BOOT capacitor from overcharging, should excessively large
negative swings occur at the transitions of the PHASE node.
®
1
AMD® is a registered trademark of Advanced Micro Devices, Inc. All other trademarks mentioned are the property of their respective owners.
Data Sheet
Copyright Intersil Americas Inc. 2005, 2006. All Rights Reserved. Intel® is a registered trademark of Intel Corporation.
1-888-INTERSIL or 1-888-468-3774
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• 0.4Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency
• ISL6605 Replacement with Enhanced Performance
• BOOT Capacitor Overcharge Prevention (ISL6609A)
• Low V
• Low Bias Supply Current
• Enable Input and Power-On Reset
• QFN Package
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel® and AMD®
• High Frequency Low Profile High Efficiency DC/DC
• High Current Low Voltage DC/DC Converters
• Synchronous Rectification for Isolated Power Supplies
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
- Fast Output Rise and Fall
- Ultra Low Three-State Hold-Off Time (20ns)
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
- Near Chip-Scale Package Footprint; Improves PCB
Microprocessors
Converters
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
No Leads-Product Outline
Efficiency and Thinner in Profile
F
March 6, 2006
Internal Bootstrap Diode
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
ISL6609, ISL6609A
FN9221.1

Related parts for ISL6609

ISL6609 Summary of contents

Page 1

... Data Sheet Synchronous Rectified MOSFET Driver The ISL6609, ISL6609A is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil ISL63xx or ISL65xx multiphase PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors ...

Page 2

... VCC 5 LGATE ISL6609 and ISL6609A R BOOT SHOOT- 4.25K THROUGH PROTECTION CONTROL LOGIC 4K ) AVAILABLE ONLY IN ISL6609A BOOT PACKAGE (Pb-Free SOIC 8 Ld 3x3 QFN 8 Ld SOIC 8 Ld 3x3 QFN 8 Ld SOIC 8 Ld 3x3 QFN 8 Ld SOIC 8 Ld 3x3 QFN ISL6609, ISL6609A (QFN) ...

Page 3

... Typical Application - Multiphase Converter Using ISL6609 Gate Drivers +5V +5V FB COMP VCC VSEN PWM1 PWM2 PGOOD PWM CONTROL (ISL63XX or ISL65XX) ISEN1 VID (OPTIONAL) ISEN2 FS/EN GND R IS REQUIRED FOR SPECIAL POWER SEQUENCING APPLICATIONS UGPH 3 ISL6609, ISL6609A +5V BOOT VCC EN UGATE PWM ISL6609 PHASE LGATE ...

Page 4

... LGATE Rise Time (Note 4) UGATE Fall Time (Note 4) LGATE Fall Time (Note 4) UGATE Turn-Off Propagation Delay LGATE Turn-Off Propagation Delay 4 ISL6609, ISL6609A Thermal Information Thermal Resistance (Notes SOIC Package (Note QFN Package (Notes 2, 3 -0. (DC) Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C -0. (< ...

Page 5

... Three-state PWM Input section for further details. Connect this pin to the PWM output of the controller. GND (Pin 4) Ground pin. All signals are referenced to this node. 5 ISL6609, ISL6609A = -40°C to 100°C, unless otherwise noted (Continued) A SYMBOL TEST CONDITIONS t ...

Page 6

... MOSFET due to high dV/dt of the switching node. Three-State PWM Input A unique feature of the ISL6609/09A is the adaptable three- state PWM input. Once the PWM signal enters the shutdown window, either MOSFET previously conducting is turned off. ...

Page 7

... Calculating the power dissipation in the driver for a desired application is critical to ensure safe operation. Exceeding the maximum 7 ISL6609, ISL6609A allowable power dissipation level will push the IC beyond the maximum recommended operating junction temperature of 125°C. The maximum allowable IC power dissipation for the ...

Page 8

... The selection of D -PAK, or D-PAK packaged MOSFETs much better match (for the reasons discussed) for the ISL6609A. Low-profile MOSFETs, such as Direct FETs and multi-SOURCE leads devices (SO-8, LFPAK, PowerPAK), have low parasitic lead inductances and can be driven by either ISL6609 or ISL6609A (assuming proper layout design). The ISL6609, missing the 3Ω ...

Page 9

... rss GD UGPH GI VCC BOOT C BOOT DU G UGATE DL PHASE FIGURE 5. GATE TO SOURCE RESISTOR TO REDUCE UPPER MOSFET MILLER COUPLING 9 ISL6609, ISL6609A DS   ⋅  iss (EQ. 5)    iss GD GS VIN ...

Page 10

... Quad Flat No-Lead Plastic Package (QFN) Micro Lead Frame Plastic Package (MLFP) 10 ISL6609, ISL6609A L8.3x3 8 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE (COMPLIANT TO JEDEC MO-220VEEC ISSUE C) SYMBOL MIN 0. θ - NOTES: 1. Dimensioning and tolerancing conform to ASME Y14.5-1994. ...

Page 11

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 11 ISL6609, ISL6609A M8.15 (JEDEC MS-012-AA ISSUE C) 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE ...

Related keywords