DSPIC30F2011-30I/ML Microchip Technology, DSPIC30F2011-30I/ML Datasheet - Page 41

• Manufacturer Part Number: DSPIC30F2011-30I/ML
• Description: IC DSPIC MCU/DSP 12K 28QFN
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F2011-30I/ML

• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 30 MIPs
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 12
• Program Memory Size: 12KB (4K x 24)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 8x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Core Frequency: 40MHz
• Core Supply Voltage: 5.5V
• Embedded Interface Type: I2C, SPI, UART
• No. Of I/o's: 12
• Flash Memory Size: 12KB
• Supply Voltage Range: 2.5V To 5.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: DAF30-4 - DEVICE ATP FOR ICE4000
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: DSPIC30F201130IML

TABLE 11-5:
© 2010 Microchip Technology Inc.
Step 6: Update the row address stored in NVMADRU:NVMADR. When W6 rolls over to 0x0, NVMADRU must be
0000
0000
0000
0000
Step 7: Reset device internal PC.
0000
0000
Step 8: Repeat Steps 3-7 until all rows of code memory are erased.
Step 9: Initialize NVMADR and NVMADRU to erase executive memory and initialize W7 for row address updates.
0000
0000
0000
0000
0000
Step 10: Set NVMCON to erase 1 row of executive memory.
0000
0000
Step 11: Unlock the NVMCON to erase 1 row of executive memory.
0000
0000
0000
0000
Step 12: Initiate the erase cycle.
0000
0000
0000
—
0000
0000
0000
0000
0000
Step 13: Update the row address stored in NVMADR.
0000
0000
Step 14: Reset device internal PC.
0000
0000
Step 15: Repeat Steps 10-14 until all 24 rows of executive memory are erased.
Step 16: Initialize NVMADR and NVMADRU to erase data memory and initialize W7 for row address updates.
0000
0000
0000
0000
0000
Step 17: Set NVMCON to erase 1 row of data memory.
0000
0000
Command
(Binary)
incremented.
430307
AF0042
EC2764
883B16
040100
000000
EB0300
883B16
200807
883B27
200407
24071A
883B0A
200558
883B38
200AA9
883B39
A8E761
000000
000000
—
000000
000000
A9E761
000000
000000
430307
883B16
040100
000000
2XXXX6
883B16
2007F6
883B16
200207
24075A
883B0A
(Hexadecimal)
SERIAL INSTRUCTION EXECUTION FOR ERASING PROGRAM MEMORY
(EITHER IN LOW-VOLTAGE OR NORMAL-VOLTAGE SYSTEMS) (CONTINUED)
Data
ADD
BTSC
INC
MOV
GOTO 0x100
NOP
CLR
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
BSET NVMCON, #WR
NOP
NOP
Externally time ‘P13a’ ms (see
Timing
NOP
NOP
BCLR NVMCON, #WR
NOP
NOP
ADD
MOV
GOTO 0x100
NOP
MOV
MOV
MOV
MOV
MOV
MOV
MOV
Requirements”)
W6, W7, W6
SR, #C
NVMADRU
W6, NVMADR
W6
W6, NVMADR
#0x80, W7
W7, NVMADRU
#0x40, W7
#0x4071, W10
W10, NVMCON
#0x55, W8
W8, NVMKEY
#0xAA, W9
W9, NVMKEY
W6, W7, W6
W6, NVMADR
#<lower 16-bits of starting Data EEPROM address>, W6
W6, NVMADR
#0x7F, W6
W6, NVMADRU
#0x20, W7
#0x4075, W10
W10, NVMCON
Description
Section 13.0 “AC/DC Characteristics and
DS70102K-page 41