CY8CLED04D01-56LTXI Cypress Semiconductor Corp, CY8CLED04D01-56LTXI Datasheet - Page 29

• Manufacturer Part Number: CY8CLED04D01-56LTXI
• Description: IC POWERPSOC 4CH 1A 56VQFN
• Manufacturer: Cypress Semiconductor Corp
• Series: PowerPSoC® CY8CLEDr

Specifications of CY8CLED04D01-56LTXI

• Package / Case: 56-VQFN Exposed Pad, 56-HVQFN, 56-SQFN, 56-DHVQFN
• Core Processor: M8C
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: DALI, DMX512, I²C, IrDA, SPI, UART/USART
• Peripherals: LED, LVD, POR, PWM, WDT
• Number Of I /o: 14
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 4.75 V ~ 5.25 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Operating Supply Voltage: 7 V to 32 V
• Maximum Supply Current: 50 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 428-2882 - KIT STARTER POWERPSOC LIGHTING428-2281 - KIT EVAL POWERPSOC LIGHTING428-2271 - KIT EVAL COLOR-LOCK428-2270 - KIT STARTER DEMO LIGHTING770-1000 - ISP 4PORT FOR CYPRESS PSOC MCU
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 428-2279

Table 15-5. Low Side N-Channel FET AC Specifications
15.4 Power Peripheral External Power FET Driver
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and T
Table 15-6. Power FET Driver DC Specifications
Table 15-7. Power FET Driver AC Specifications
Document Number: 001-46319 Rev. *E
t
t
V
V
I
t
t
tp(LH)
tp(HL)
R
F
SFETDRV
r
f
Symbol
Symbol
OHN
OLN
Symbol
J
≤ 115
N-Channel FET Driver Output Voltage -Drive
High
N-Channel FET Driver Output Voltage -Drive
Low
Supply Current Per Channel - External FET
Driver
Rise Time
Fall Time
Propagation Delay (Low-to-High)
Propagation Delay (High-to-Low))
o
Rise Time
Fall Time
C. Typical parameters apply to 5V at 25°C. These are for design guidance only.
Description
Description
Figure 15-2. Low Side N-Channel FET Test Circuit for I
Description
V
G
R
G
VDD - 0.45
VDD - 0.1
Min
Min
–
–
–
–
–
–
–
Min
–
–
I
D
Typ
Typ
Typ
45
45
–
–
–
–
–
–
–
–
–
CY8CLED04G01, CY8CLED03G01
CY8CLED04D01, CY8CLED04D02
CY8CLED03D01, CY8CLED03D02
R
D
V
Max
20
20
IN
Max
Max
0.45
0.1
55
55
10
10
25
–
–
Units
ns
ns
DSS,
Units
Units
mA
ns
ns
ns
ns
V
V
V
V
t
R, and
I
I
D
D
= 1A, R
= 1A, R
I
I
I
I
C
F
OH
OH
OL
OL
C
SW
L
L
t
= 4nF at GDVDD = 5V,
=100 mA
=10 mA
F
= 4nF at GDVDD = 5V
=100 mA
=10 mA
= 1 MHz
D
D
= 32Ω
= 32Ω
Notes
Notes
Notes
Page 29 of 47
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