MC9S08DZ48AMLF Freescale Semiconductor, MC9S08DZ48AMLF Datasheet - Page 55
![MCU 8BIT 48K FLASH EE 48-LQFP](/photos/37/62/376254/lqfp-48_sml.jpg)
MC9S08DZ48AMLF
Manufacturer Part Number
MC9S08DZ48AMLF
Description
MCU 8BIT 48K FLASH EE 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheets
1.DEMO9S08DZ60.pdf
(416 pages)
2.EVB9S08DZ60.pdf
(4 pages)
3.MC9S08DZ48AMLF.pdf
(458 pages)
Specifications of MC9S08DZ48AMLF
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
48KB (48K x 8)
Program Memory Type
FLASH
Eeprom Size
1.5K x 8
Ram Size
3K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
48-LQFP
Processor Series
S08DZ
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
3 KB
Interface Type
CAN, I2C, SCI, SPI
Number Of Programmable I/os
40
Number Of Timers
2
Operating Supply Voltage
5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08DZ60
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 16 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08DZ48AMLF
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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4.5.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the Flash array
does not need to be disabled between program operations. Ordinarily, when a program or erase command
is issued, an internal charge pump associated with the Flash memory must be enabled to supply high
voltage to the array. Upon completion of the command, the charge pump is turned off. When a burst
program command is issued, the charge pump is enabled and remains enabled after completion of the burst
program operation if these two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
Freescale Semiconductor
•
•
The next burst program command sequence has begun before the FCCF bit is set.
The next sequential address selects a byte on the same burst block as the current byte being
programmed. A burst block in this Flash memory consists of 32 bytes. A new burst block begins
at each 32-byte address boundary.
Burst Program Execution
PROGRAM AND
ERASE FLOW
Figure 4-2. Program and Erase Flowchart
MC9S08DZ60 Series Data Sheet, Rev. 4
0
WRITE TO FLASH OR EEPROM TO
WRITE COMMAND TO FCMD
BUFFER ADDRESS AND DATA
TO LAUNCH COMMAND
AND CLEAR FCBEF
WRITE TO FCDIV
WRITE 1 TO FCBEF
CLEAR ERROR
FACCERR?
FPVIOL OR
FACCERR?
START
FCCF?
DONE
1
NO
(1)
(2)
0
YES
(2)
before checking FCBEF or FCCF.
(1)
Wait at least four bus cycles
after reset.
Required only once
ERROR EXIT
Chapter 4 Memory
55
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