MCIMX251AJM4 Freescale Semiconductor, MCIMX251AJM4 Datasheet - Page 66

• Manufacturer Part Number: MCIMX251AJM4
• Description: IC MPU IMX25 AUTO 400MAPBGA
• Manufacturer: Freescale Semiconductor
• Series: i.MX25r

Specifications of MCIMX251AJM4

• Core Processor: ARM9
• Core Size: 32-Bit
• Speed: 400MHz
• Connectivity: 1-Wire, CAN, EBI/EMI, Ethernet, I²C, MMC, SmartCard, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, I²S, POR, PWM, WDT
• Number Of I /o: 128
• Program Memory Type: External Program Memory
• Ram Size: 144K x 8
• Voltage - Supply (vcc/vdd): 1.15 V ~ 1.52 V
• Data Converters: A/D 3x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 400-MAPBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -

1
66
These values are for a DQ/DM slew rate of 1 V/ns and a DQS slew rate of 1 V/ns. For additional values use
DtDH1 Derating Values for DDR2-400, DDR2-533.”
DDR17
DDR18
DDR19
DDR20
DDR21
DDR22
DDR23
ID
DQ & DQM setup time to DQS (single-ended strobe)
DQ & DQM hold time to DQS (single-ended strobe)
Write cycle DQS falling edge to SDCLK output setup time
Write cycle DQS falling edge to SDCLK output hold time
DQS latching rising transitions to associated clock edges
DQS high-level width
DQS low-level width
DQM (output)
DQS (output)
DQ (output)
SDCLK_B
SDCLK
ΔtD
2.0 V/ns
S1
Table 53. ΔtDS1, ΔtDH1 Derating Values for DDR2-400, DDR2-533
ΔtD
H1
i.MX25 Applications Processor for Automotive Products, Rev. 8
Figure 32. DDR2 SDRAM Write Cycle Timing Diagram
Table 52. DDR2 SDRAM Write Cycle Parameter Table
ΔtD
1.5 V/ns
S1
DDR17
DDR21
DDR17
ΔtD
H1
Parameter
ΔtD
S1
1.0 V/ns
Data
DM
ΔtD
H1
DDR18
DDR18
Data
DM
ΔtD
0.9 V/ns
S1
DQS Single-Ended Slew Rate
ΔtD
H1
DDR17
DDR17
Data
DM
1
1
ΔtD
DDR22
0.8 V/ns
S1
ΔtD
Data
DM
H1
DDR23
ΔtD
S1
0.7 V/ns
DDR18
DDR18
t
t
Symbol
Data
DS1(base)
DH1(base)
DM
t
t
t
t
DQSS
DQSH
t
DQSL
DSS
DSH
ΔtD
H1
ΔtD
S1
0.6 V/ns
Data
DM
DDR19
ΔtD
0.025
0.025
H1
-0.25
Min.
0.35
0.35
0.2
0.2
1,2,3
DDR2-400
Freescale Semiconductor
Data
DM
ΔtD
S1
0.5 Vns
Table
Max.
ΔtD
0.25
H1
Data
DM
—
—
—
—
—
—
DDR20
53, “DtDS1,
ΔtD
S1
0.4 V/ns
Unit
tCK
tCK
tCK
tCK
tCK
ns
ns
ΔtD
H1