APT75GT120JU2 Microsemi Power Products Group, APT75GT120JU2 Datasheet - Page 3

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APT75GT120JU2

Manufacturer Part Number
APT75GT120JU2
Description
IGBT 1200V 100A 416W SOT227
Manufacturer
Microsemi Power Products Group
Series
Trench + Field Stop IGBT®r
Datasheet

Specifications of APT75GT120JU2

Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
5.34nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT75GT120JU2
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT75GT120JU2
Manufacturer:
APT
Quantity:
15 500
Chopper diode ratings and characteristics
Thermal and package characteristics
Symbol
Symbol Characteristic
T
Typical IGBT Performance Curve
Torque
V
R
R
J
I
I
,T
I
RRM
RRM
Wt
V
C
Q
Q
T
ISOL
thJA
RM
t
t
thJC
rr
rr
L
T
F
rr
rr
STG
Junction to Case Thermal Resistance
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque
Package Weight
Characteristic
Diode Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Ope rating Fre quency vs Colle ctor Current
40
35
30
25
20
15
10
5
0
0
20
Test Conditions
I
I
I
V
V
V
I
di/dt =100A/µs
I
V
di/dt =200A/µs
I
V
di/dt =1000A/µs
www.microsemi.com
F
F
F
F
F
F
=1A,V
R
R
R
R
R
= 30A
= 60A
= 30A
= 30A
= 30A
= 1200V
= 1200V
= 200V
= 800V
= 800V
40
R
I
C
=30V
60
(A)
V
D=50%
R
T
80
J
G
CE
=125°C
=4.7Ω
=600V
T
T
T
T
T
T
T
T
T
T
T
100
j
j
j
j
j
j
Diode
j
j
j
j
j
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
IGBT
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
APT75GT120JU2
120
2500
Min
-55
Min
29.2
3450
4650
Typ
Typ
370
500
660
220
2.0
2.3
1.8
32
31
12
37
5
Max
150
300
Max
0.3
1.1
1.5
20
250
500
2.5
°C/W
Unit
Unit
N.m
µA
°C
pF
nC
nC
V
ns
ns
V
A
A
g
3 - 7

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