APT75GT120JU2 Microsemi Power Products Group, APT75GT120JU2 Datasheet - Page 7

• Manufacturer Part Number: APT75GT120JU2
• Description: IGBT 1200V 100A 416W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Trench + Field Stop IGBT®r

Specifications of APT75GT120JU2

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 5.34nF @ 25V
• Power - Max: 416W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
SOT-227 (ISOTOP
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
r = 4.0 (.157)
(2 places)
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
www.microsemi.com
3.3 (.129)
3.6 (.143)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
Cathode
Emitter
1.95 (.077)
2.14 (.084)
APT75GT120JU2
8.9 (.350)
9.6 (.378)
11.8 (.463)
12.2 (.480)
0.75 (.030)
0.85 (.033)
Collector
Gate
Hex Nut M4
*
(4 places)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
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