APTGF50DDA120T3G Microsemi Power Products Group, APTGF50DDA120T3G Datasheet

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APTGF50DDA120T3G

Manufacturer Part Number
APTGF50DDA120T3G
Description
IGBT MOD NPT 1200V 50A SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50DDA120T3G

Igbt Type
NPT
Configuration
Dual Boost Chopper
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
70A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
All multiple inputs and outputs must be shorted together
RBSOA
Symbol
V
V
I
NPT IGBT Power Module
P
I
CM
CES
GE
C
D
26
27
Dual Boost chopper
29
30
31
32
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
28 27 26
Example: 13/14 ; 29/30 ; 22/23 …
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
2
15
Q1
29
CR1
3
25
4
30
22
23
Parameter
13
23 22
14
7
8
7
31
R1
8
20
CR2
Q2
32
19
10
18
11 12
16
4
3
16
15
14
13
www.microsemi.com
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
APTGF50DDA120T3G
100A @ 1200V
Max ratings
AC and DC motor control
Switched Mode Power Supplies
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Outstanding
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single buck of twice the current capability
RoHS compliant
1200
-
-
-
-
-
-
-
-
150
±20
312
70
50
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
Symmetrical design
V
I
C
CES
= 50A @ Tc = 80°C
performance
= 1200V
Unit
W
A
V
V
at
high
frequency
1 - 7

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APTGF50DDA120T3G Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50DDA120T3G Application • AC and DC motor control • Switched Mode Power Supplies CR2 Features • ...

Page 2

... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50DDA120T3G = 25°C unless otherwise specified j Test Conditions 25° 1200V T = 125° 25°C V =15V ...

Page 3

... 298.15 K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF50DDA120T3G Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ − ...

Page 4

... Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0. Junction Temperature (°C) J APTGF50DDA120T3G Output Characteristics (V =15V 250µs Pulse Test < 0.5% Duty cycle 30 T =125° Collector to Emitter Voltage ( 50A T =25°C 16 ...

Page 5

... Switching Energy Losses vs Gate Resistance 600V 15V 125° Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A Gate Resistance (Ohms) www.microsemi.com APTGF50DDA120T3G Turn-Off Delay Time vs Collector Current 400 V =15V =125°C 350 J 300 V =15V =25°C 250 600V 5Ω G 200 100 I , Collector to Emitter Current (A) ...

Page 6

... Rectangular Pulse Duration (Seconds) APTGF50DDA120T3G Reverse Bias Safe Operating Area 120 100 400 V , Collector to Emitter Voltage (V) CE Single Pulse 0.01 0.1 Operating Frequency vs Collector Current ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50DDA120T3G Single Pulse 0.001 ...

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