APTGF50DDA120T3G Microsemi Power Products Group, APTGF50DDA120T3G Datasheet - Page 2

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APTGF50DDA120T3G

Manufacturer Part Number
APTGF50DDA120T3G
Description
IGBT MOD NPT 1200V 50A SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50DDA120T3G

Igbt Type
NPT
Configuration
Dual Boost Chopper
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
70A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTGF50DDA120T3G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Electrical Characteristics
Dynamic Characteristics
Chopper diode ratings and characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
V
V
T
T
V
T
T
I
I
C
C
C
E
CE(sat)
Q
Q
E
I
Q
GE(th)
Q
V
GES
d(off)
d(off)
CES
d(on)
T
T
d(on)
T
T
I
RRM
RM
I
t
oes
sc
ies
res
off
rr
on
F
ge
gc
rr
g
r
f
r
f
F
Zero Gate Voltage Collector Current
Collector Emitter saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Short Circuit data
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
All ratings @ T
j
= 25°C unless otherwise specified
www.microsemi.com
Test Conditions
V
I
I
I
I
V
di/dt =200A/µs
Test Conditions
V
V
V
I
V
V
Test Conditions
V
V
f = 1MHz
V
V
I
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
V
V
I
R
V
t
F
F
F
F
p
C
C
C
C
C
G
G
G
R
R
GE
CE
GE
GE
GE
GE
CE
GS
Bus
GE
Bus
GE
Bus
GE
Bus
GE
≤ 10µs ; T
= 60A
= 120A
= 60A
= 60A
= 50A
= 50A
= 50A
= 50A
= 50A
=1200V
= 800V
= 5 Ω
= 5 Ω
= 5 Ω
= 0V
= 1200V
=15V
= V
= 20 V, V
= 0V
= 25V
= 15V
= 15V
= ±15V
= ±15V
≤15V ; V
= 600V
= 600V
= 600V
= 600V
CE
APTGF50DDA120T3G
, I
j
C
= 125°C
Bus
CE
= 1 mA
= 900V
= 0V
T
T
T
T
T
T
T
T
T
T
T
T
T
Tc = 80°C
j
j
j
j
j
j
j
j
j
j
j
j
j
= 25°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 125°C
1200
Min
Min
Min
4.5
2890
3450
Typ
265
350
560
3.05
Typ
Typ
2.5
1.8
330
220
330
200
320
360
300
3.2
4.0
60
6.9
35
35
65
30
35
65
40
3
Max
Max
Max
100
500
250
500
100
3.7
6.5
3
Unit
Unit
Unit
µA
µA
nA
nC
nC
mJ
ns
pF
ns
ns
V
A
V
V
V
A
2 - 7

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