APT75GN120J Microsemi Power Products Group, APT75GN120J Datasheet

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APT75GN120J

Manufacturer Part Number
APT75GN120J
Description
IGBT 1200V 124A 379W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT75GN120J

Igbt Type
Field Stop and Trench
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 75A
Current - Collector (ic) (max)
124A
Current - Collector Cutoff (max)
100µA
Input Capacitance (cies) @ Vce
4.8nF @ 25V
Power - Max
379W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT75GN120JG
APT75GN120JG

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT75GN120J
Manufacturer:
APT
Quantity:
1 000
Part Number:
APT75GN120J
Quantity:
104
Part Number:
APT75GN120JNQ3
Manufacturer:
ORIGIN
Quantity:
1 000
Part Number:
APT75GN120JNQ3
Quantity:
109
TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
• Trench Gate: Low V
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V Field Stop
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
T
CES
CM
C1
C2
GE
CE(ON)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
and are ideal for low frequency applications that require absolute minimum
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(ON)
CE(on)
temperature coefficient. A built-in gate resistor ensures
1
(V
CE
CE
CE
@ T
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
C
GE
GE
= 150°C
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 3mA, T
GE
GE
C
C
= 0V, I
= 75A, T
= 75A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 3mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
1200
MIN
5.0
1.4
225A @ 1200V
APT75GN120J
-55 to 150
1200
TYP
±30
124
225
379
300
5.8
1.7
2.0
57
10
APT75GN120J
ISOTOP
G
APT75GN120J
MAX
TBD
100
600
6.5
2.1
1200V
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

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APT75GN120J Summary of contents

Page 1

... 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT75GN120J APT75GN120J ISOTOP ® 25°C unless otherwise specified. C APT75GN120J 1200 ±30 124 57 225 225A @ 1200V 379 -55 to 150 300 MIN TYP MAX 1200 5.0 5.8 6.5 1.4 1.7 2.1 2.0 ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...

Page 3

V = 15V GE 140 T = -55°C J 120 T = 25°C J 100 T = 125° 0.5 1.0 1.5 2.0 2.5 3 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, ...

Page 4

V = 15V 800V 25°C or =125° 1.0Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, ...

Page 5

... T = 125 C J ° 6. 800V 1.0Ω 100 110 120 I , COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT75GN120J 200 400 600 800 1000 1200 1400 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 min (f max f = max1 t d(on ...

Page 6

... Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) Collector Voltage 90 10% Collector Current 0 Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% t d(on) 5% Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T = 125°C J APT75GN120J Gate Voltage T = 125° Collector Current 90% 5% 10% Collector Voltage ...

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