APT75GN120J Microsemi Power Products Group, APT75GN120J Datasheet - Page 5

• Manufacturer Part Number: APT75GN120J
• Description: IGBT 1200V 124A 379W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT75GN120J

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 124A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 4.8nF @ 25V
• Power - Max: 379W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT75GN120JG; APT75GN120JG

Case temperature. (°C)
TYPICAL PERFORMANCE CURVES
Figure 17, Capacitance vs Collector-To-Emitter Voltage
6,000
1,000
Junction
temp. (°C)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
CE
0
10
(watts)
0
Power
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
20
10
-4
0.0820
0.214
0.0335
30
40
RECTANGULAR PULSE DURATION (SECONDS)
C
10
C
C
0.00977
0.227
6.33
ies
oes
res
-3
50
SINGLE PULSE
10
-2
Figure 20, Operating Frequency vs Collector Current
40
10
5
1
10 20 30 40 50 60 70 80 90 100 110 120
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
= 1.0Ω
250
200
150
100
= 800V
Figure 18,Minimim Switching Safe Operating Area
50
0
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
10
CE
200
-1
, COLLECTOR TO EMITTER VOLTAGE
400
Note:
Peak T J = P DM x Z θJC + T C
600
Duty Factor D =
1.0
t 1
800 1000 1200 1400
t 2
t 1
/
t 2
F
f
f
P
max1
max2
APT75GN120J
max
diss
10
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f