APTGT75DA60T1G Microsemi Power Products Group, APTGT75DA60T1G Datasheet

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... NTC 4 • • 12 • Benefits • • • • • • Parameter www.microsemi.com APTGT75DA60T1G V = 600V CES I = 75A @ Tc = 80° and DC motor control Switched Mode Power Supplies Power Factor Correction ® Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current ...

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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT75DA60T1G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 75A T = 150°C C ...

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... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGT75DA60T1G Min Typ Max IGBT 0.60 Diode 0.98 2500 -40 175 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

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... J T =25°C J 1 =25° =25° (V) GE Eoff Eon IGBT Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT75DA60T1G Output Characteristics 150 V =19V T = 150° 125 V =13V 100 GE V =15V = 0.5 1 1 (V) CE Energy losses vs Collector Current 300V CE Eoff ...

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... U.S and Foreign patents pending. All Rights Reserved. V =300V CE D=50% R =4.7Ω =150° =85°C c ZCS 60 80 100 I (A) C Diode Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT75DA60T1G Forward Characteristic of diode 150 125 100 75 T =125° =150° =25° 0.4 0.8 1.2 1 (V) F ...