APTGT75DA60T1G Microsemi Power Products Group, APTGT75DA60T1G Datasheet - Page 4
APTGT75DA60T1G
Manufacturer Part Number
APTGT75DA60T1G
Description
IGBT 600V 100A 250W SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT75DA60T1G.pdf
(5 pages)
Specifications of APTGT75DA60T1G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.62nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
150
125
100
150
125
100
5
4
3
2
1
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
75
50
25
75
50
25
0.00001
0
0
0
0
0
5
V
V
I
T
C
J
CE
GE
= 75A
= 150°C
0.9
0.5
0.7
0.3
0.1
= 300V
5
=15V
Output Characteristics (V
0.05
T
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
6
Transfert Characteristics
J
=125°C
Gate Resistance (ohms)
10
T
Eon
T
J
=125°C
7
J
=150°C
T
1
15
J
0.0001
=25°C
V
8
V
T
CE
20
T
1.5
J
GE
=25°C
J
=25°C
(V)
(V)
T
9
25
J
=25°C
Eoff
2
Eon
10
30
GE
Er
T
J
=15V)
=150°C
Rectangular Pulse Duration in Seconds
0.001
2.5
11
35
www.microsemi.com
Single Pulse
40
3
12
0.01
IGBT
175
150
125
100
150
125
100
5
4
3
2
1
0
75
50
25
APTGT75DA60T1G
75
50
25
0
0
0
0
0
V
V
R
T
J
CE
GE
G
V
T
R
T
Energy losses vs Collector Current
= 150°C
Reverse Bias Safe Operating Area
= 4.7Ω
J
GE
J
= 300V
G
= 15V
0.1
=150°C
100
25
=4.7Ω
= 150°C
0.5
=15V
200
1
50
Output Characteristics
300
V
1.5
I
C
GE
V
V
75
(A)
=19V
CE
CE
400
1
(V)
(V)
2
100
V
GE
500 600 700
2.5
Eoff
=15V
V
GE
125
V
=13V
GE
Eon
Er
3
=9V
10
150
3.5
4 – 5