APT100GN120J Microsemi Power Products Group, APT100GN120J Datasheet

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APT100GN120J

Manufacturer Part Number
APT100GN120J
Description
IGBT 1200V 153A 446W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT100GN120J.pdf (6 pages)

Specifications of APT100GN120J

Igbt Type
Field Stop and Trench
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 100A
Current - Collector (ic) (max)
153A
Current - Collector Cutoff (max)
100µA
Input Capacitance (cies) @ Vce
6.5nF @ 25V
Power - Max
446W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT100GN120J
Manufacturer:
APT
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
APT100GN120J
Quantity:
105
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT100GN120JDQ4
Manufacturer:
APT
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
APT100GN120JDQ4
Quantity:
110
TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V Field Stop
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
T
CES
CM
C1
C2
GE
CE(ON)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
and are ideal for low frequency applications that require absolute minimum
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(ON)
CE(on)
temperature coefficient. A built-in gate resistor ensures
1
(V
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 6mA, T
GE
GE
C
C
= 0V, I
= 100A, T
= 100A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 6mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
1200
MIN
5.0
1.4
300A @ 1200V
APT100GN120J
-55 to 150
APT100GN120J
1200
TYP
±30
153
300
446
300
5.8
1.7
2.0
7.5
70
ISOTOP
G
APT100GN120J
MAX
TBD
100
600
6.5
2.1
1200V
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω

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APT100GN120J Summary of contents

Page 1

... 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT100GN120J APT100GN120J ISOTOP ® 25°C unless otherwise specified. C APT100GN120J 1200 ±30 153 70 300 300A @ 1200V 446 -55 to 150 300 MIN TYP MAX 1200 5.0 5.8 6.5 1.4 1.7 2.1 2.0 ...

Page 2

... 100A 1.0Ω +25° Inductive Switching (125° 800V 15V 100A 1.0Ω +125° nor gate driver impedance. (MIC4452) G(int) APT100GN120J MIN TYP MAX 6500 365 = 25V 280 9.5 540 50 295 , 300 = 1200V 50 50 615 105 9 725 210 MIN TYP MAX ...

Page 3

V = 15V -55°C J 250 T = 25°C J 200 T = 125°C J 150 T = 175°C J 100 1.0 2.0 3.0 4 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, ...

Page 4

V = 15V 800V 25°C or 125° 1.0Ω 100µ 100 130 160 I , COLLECTOR TO EMITTER ...

Page 5

... RECTANGULAR PULSE DURATION (SECONDS 0.0158 5 0.397 ° 125 C J ° 28 800V 1.0Ω COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT100GN120J 200 400 600 800 1000 1200 1400 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1 min (f max f = max1 t d(on max2 ...

Page 6

... Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) 90% Collector Voltage t f 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% t d(on) 5% Figure 22, Turn-on Switching Waveforms and Definitions T = 125°C J APT100GN120J Gate Voltage T = 125° Collector Current 90% 5% 10% Collector Voltage Switching Energy ...

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