APT100GN120J Microsemi Power Products Group, APT100GN120J Datasheet - Page 2

• Manufacturer Part Number: APT100GN120J
• Description: IGBT 1200V 153A 446W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GN120J

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 153A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 6.5nF @ 25V
• Power - Max: 446W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Symbol
V
Torque
SSOA
V
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
t
t
C
E
E
E
E
Isolation
C
R
R
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
Q
W
on1
on2
off
G
GEP
on1
on2
on1
on2
oes
t
t
t
t
res
θ
θ
ies
ge
off
off
gc
r
r
f
f
g
JC
JC
is external gate resistance, not including R
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
RMS Voltage (
Package Weight
Maximum Terminal & Mounting Torque
ces
includes both IGBT and FRED leakages
50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
3
6
4
4
66
4
G(int)
55
5
nor gate driver impedance. (MIC4452)
T
15V, L = 100µH,V
Inductive Switching (125°C)
J
Inductive Switching (25°C)
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
R
V
R
V
T
V
V
V
f = 1 MHz
I
I
I
J
CC
CC
CE
G
G
C
C
J
C
GE
GE
GE
= +125°C
= +25°C
= 100A
= 100A
= 1.0Ω
= 100A
= 1.0Ω
= 600V
G
= 800V
= 800V
= 15V
= 15V
= 15V
= 4.3Ω
CE
CE
= 25V
7
7
= 1200V
7
, V
GE
=
2500
MIN
300
MIN
6500
1.03
29.2
TYP
TYP
365
280
540
295
615
105
725
210
9.5
9.5
50
50
50
11
15
50
50
12
22
14
APT100GN120J
MAX
MAX
N/A
.28
1.1
10
UNIT
UNIT
°C/W
Volts
Ib•in
N•m
m
m
gm
nC
pF
ns
ns
oz
V
A
J
J