APT75GT120JU3 Microsemi Power Products Group, APT75GT120JU3 Datasheet - Page 2

• Manufacturer Part Number: APT75GT120JU3
• Description: IGBT 1200V 100A 416W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT75GT120JU3

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 5.34nF @ 25V
• Power - Max: 416W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Dynamic Characteristics
Symbol Characteristic
Symbol Characteristic
V
V
T
T
T
T
I
I
C
C
C
E
E
CE(on)
GE(th)
CES
d(off)
d(off)
GES
d(on)
T
T
d(on)
T
T
oes
ies
res
on
off
r
f
r
f
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
All ratings @ T
www.microsemi.com
j
= 25°C unless otherwise specified
V
Test Conditions
V
I
V
V
Test Conditions
V
V
f = 1MHz
Resistive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
C
C
C
GE
GE
GE
GE
GE
CE
GE
Bus
G
GE
Bus
G
= 75A
= 75A
= 75A
= 4.7Ω
= 4.7Ω
= 0V, V
= 25V
=15V
= V
= ±20V, V
= 0V
= 15V
= 15V
= 600V
= 600V
CE
, I
CE
C
= 3mA
= 1200V
CE
T
T
= 0V
j
j
= 25°C
= 125°C
APT75GT120JU3
Min
Min
1.4
5.0
5340
Typ
Typ
280
240
260
420
290
520
1.7
2.0
9.5
30
70
45
90
7
Max
Max
500
2.1
6.5
5
Unit
Unit
mA
nA
pF
mJ
V
V
ns
ns
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