APT75GT120JU3 Microsemi Power Products Group, APT75GT120JU3 Datasheet - Page 4

• Manufacturer Part Number: APT75GT120JU3
• Description: IGBT 1200V 100A 416W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT75GT120JU3

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 5.34nF @ 25V
• Power - Max: 416W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

150
125
100
150
125
100
16
14
12
10
0.35
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
75
50
25
75
50
25
8
6
4
0.3
0.2
0.1
0
0.00001
0
0
0
0
5
V
V
I
T
C
Output Characteristics (V
J
CE
GE
= 75A
= 125°C
= 600V
4
=15V
0.05
6
0.9
0.7
0.3
0.1
0.5
Transfert Characteristics
Gate Resistance (ohms)
8
1
T
7
J
=25°C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
12
0.0001
V
8
V
CE
GE
16
2
(V)
T
(V)
J
9
=25°C
20
GE
Eon
T
10
=15V)
J
24
=125°C
3
T
J
rectangular Pulse Duration (Seconds)
=125°C
0.001
www.microsemi.com
11
28
Eoff
Single Pulse
32
12
4
IGBT
0.01
200
175
150
125
100
150
125
100
17.5
12.5
75
50
25
75
50
25
7.5
2.5
0
0
20
15
10
5
0
0
0
0
V
T
R
Energy losses vs Collector Current
APT75GT120JU3
V
J
T
T
GE
G
0.1
V
R
=125°C
J
CE
=4.7Ω
J
Reverse Safe Operating Area
GE
G
=15V
= 125°C
= 125°C
= 4.7Ω
25
= 600V
= 15V
400
1
Output Characteristics
50
V
GE
V
=17V
I
800
C
V
CE
75
CE
(A)
2
(V)
1
(A)
100
1200
V
GE
3
V
=15V
V
125
GE
GE
Eoff
Eon
=13V
=9V
1600
10
150
4
4 - 7