APT65GP60J Microsemi Power Products Group, APT65GP60J Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/4/447/microsemi_power_products_group_sml.jpg)
APT65GP60J
Manufacturer Part Number
APT65GP60J
Description
IGBT 600V 130A 431W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT65GP60J.pdf
(6 pages)
Specifications of APT65GP60J
Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 65A
Current - Collector (ic) (max)
130A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
7.4nF @ 25V
Power - Max
431W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT65GP60J
Manufacturer:
APT
Quantity:
15 500
Company:
Part Number:
APT65GP60JDF2
Manufacturer:
APT
Quantity:
15 500
TYPICAL PERFORMANCE CURVES
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.10
1.05
0.95
0.85
100
250
200
150
100
3.5
2.5
1.5
0.5
1.2
1.0
0.9
0.8
90
80
70
60
50
40
30
20
10
50
0
0
4
3
2
1
0
FIGURE 1, Output Characteristics(V
-50
V
0
0
6
CE
250µs PULSE TEST
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
250µs PULSE TEST
T
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
C
GE
1
FIGURE 3, Transfer Characteristics
GE
T
=125°C
-25
V GE = 15V.
J
0.5
, GATE-TO-EMITTER VOLTAGE (V)
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
2
8
T
T J = 125°C
C
0
=25°C
3
1
I
C
10
4
T J = 25°C
25
=130A
T J = -55°C
1.5
5
I
C
50
= 65A
12
6
250µs PULSE TEST
<0.5 % DUTY CYCLE
2
7
75
I
T J = 25°C.
T
C
C
14
= 32.5A
8
=-55°C
2.5
GE
100
= 15V)
9
125
16
10
3
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
100
180
160
140
120
100
2.5
1.5
0.5
90
80
70
60
50
40
30
20
10
16
14
12
10
80
60
40
20
0
8
6
4
2
0
3
2
1
0
0
FIGURE 2, Output Characteristics (V
-50
-50
V
0
0
CE
250µs PULSE TEST
T
<0.5 % DUTY CYCLE
250µs PULSE TEST
I
<0.5 % DUTY CYCLE
C
J
I
C
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 65A
=130A
-25
V GE = 10V.
-25
T
V GE = 15V.
0.5
C
T
50
=125°C
T
C
J
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
, Junction Temperature (°C)
V
0
0
T
CE
GATE CHARGE (nC)
C
1
=300V
=25°C
25
100
25
V
I
CE
C
1.5
50
=120V
= 65A
50
150
75 100 125 150
V
CE
2
75
=480V
T
I
C
C
200
=-55°C
= 32.5A
2.5
100
GE
= 10V)
APT65GP60J
250
125
3