APT65GP60J Microsemi Power Products Group, APT65GP60J Datasheet - Page 4

• Manufacturer Part Number: APT65GP60J
• Description: IGBT 600V 130A 431W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT65GP60J

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 65A
• Current - Collector (ic) (max): 130A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 7.4nF @ 25V
• Power - Max: 431W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
FIGURE 15, Switching Energy Losses vs. Gate Resistance
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
FIGURE 13, Turn-On Energy Loss vs Collector Current
9000
8000
7000
6000
5000
4000
3000
2000
1000
FIGURE 9, Turn-On Delay Time vs Collector Current
160
140
120
100
500
FIGURE 11, Current Rise Time vs Collector Current
60
50
40
30
20
10
80
60
40
20
0
0
0
0
I
I
10
CE
10
CE
10
I
0
CE
V
L = 100 µH
R
V
V
T
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
T
E
CE
G
CE
GE
J
, COLLECTOR TO EMITTER CURRENT (A)
J
= 125°C
off
= 5
=125°C,V
= 400V
= 400V
= +15V
V
E
R
130A
GE
30
30
30
off
G
10
, GATE RESISTANCE (OHMS)
= 10V
65A
E
T
off
J
GE
= 25°C, V
32.5A
50
50
50
=10V
R
20
G
=
T
T
T
GE
5 , L
J
J
70
70
70
J
=
=
=125°C, V
=10V
V
T
R
L = 100 µH
J
CE
25 or 125°C,V
G
25 or 125°C,V
= 25°C or 125°C
=
30
= 5
= 400V
T
100
J
90
90
90
= 25°C, V
E
µ
V
GE
H, V
on2
GE
=15V
E
E
= 15V
CE
130A
on2
40
on2
110
110
110
GE
GE
=
GE
32.5A
=
=
65A
400V
=15V
10V
15V
130
130
130
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
5000
4000
3000
2000
1000
6000
5000
4000
3000
2000
1000
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
140
120
100
140
120
100
FIGURE 12, Current Fall Time vs Collector Current
80
60
40
20
80
60
40
20
0
0
0
0
I
I
-50
CE
CE
10
10
10
I
CE
V
L = 100 µH
R
V
V
R
E
R
T
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
V
V
R
L = 100 µH
CE
G
CE
GE
G
on2
J
, COLLECTOR TO EMITTER CURRENT (A)
G
GE
CE
G
= 5
= 5
=
=
= 400V
T
= 400V
= +15V
= 5
-25
V
=10V,T
5 , L
125°C, V
J
65A
E
= 400V
30
30
30
, JUNCTION TEMPERATURE (°C)
GE
on2
V
T
=
GE
J
15V,T
32.5A
=
=
J
=
=125°C
E
0
100
25°C, V
T
GE
T
15V,T
50
50
50
J
on2
J
=
J
µ
=
=
=125°C
H, V
25°C, V
130A
125°C, V
10V or 15V
25
J
=25°C
GE
CE
70
70
70
=
=
GE
10V or 15V
50
400V
GE
V
=
GE
=
10V or 15V
90
90
90
=
10V or 15V
75
10V,T
E
E
110
110
110
off
J
off
=25°C
E
100
130A
off
32.5A
65A
APT65GP60J
125
130
130
130