APTGT150SK60T1G Microsemi Power Products Group, APTGT150SK60T1G Datasheet - Page 4
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APTGT150SK60T1G
Manufacturer Part Number
APTGT150SK60T1G
Description
IGBT 600V 225A 480W SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT150SK60T1G.pdf
(5 pages)
Specifications of APTGT150SK60T1G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 150A
Current - Collector (ic) (max)
225A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
9.2nF @ 25V
Power - Max
480W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
12
10
Switching Energy Losses vs Gate Resistance
50
50
8
6
4
2
0
0.35
0.25
0.15
0.05
0
0
0.3
0.2
0.1
0
0.00001
0
5
0
V
V
I
T
C
CE
GE
J
= 150A
= 150°C
Output Characteristics (V
= 300V
=15V
T
0.9
0.7
0.5
0.3
0.1
0.5
J
6
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=150°C
0.05
Transfert Characteristics
5
Gate Resistance (ohms)
T
Eon
T
J
=125°C
J
7
=125°C
T
1
Eoff
J
=25°C
10
0.0001
V
8
V
T
CE
T
1.5
J
GE
=25°C
J
=25°C
(V)
(V)
T
9
15
J
Eon
=25°C
2
10
GE
Er
T
J
=15V)
20
=150°C
2.5
Rectangular Pulse Duration in Seconds
0.001
11
Eoff
www.microsemi.com
25
3
12
Single Pulse
IGBT
0.01
APTGT150SK60T1G
350
300
250
200
150
100
300
250
200
150
100
10
50
50
8
6
4
2
0
0
0
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
J
T
CE
GE
G
J
GE
G
= 150°C
J
=150°C
= 3.3Ω
100
=3.3Ω
0.1
0.5
= 300V
= 15V
= 150°C
=15V
50
200
1
Output Characteristics
100
300
V
1.5
I
C
GE
V
V
150
(A)
=19V
CE
CE
400
(V)
1
(V)
2
V
200
GE
500
2.5
=15V
Eoff
V
GE
V
250
=13V
GE
600
3
=9V
Eon
Er
10
300
700
3.5
4 – 5