APTGT150SK60T1G Microsemi Power Products Group, APTGT150SK60T1G Datasheet - Page 5
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APTGT150SK60T1G
Manufacturer Part Number
APTGT150SK60T1G
Description
IGBT 600V 225A 480W SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT150SK60T1G.pdf
(5 pages)
Specifications of APTGT150SK60T1G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 150A
Current - Collector (ic) (max)
225A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
9.2nF @ 25V
Power - Max
480W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.6
0.5
0.4
0.3
0.2
0.1
120
100
0.00001
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
0.3
0.1
0.9
0.7
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
Hard
ZVS
50
0.0001
I
100
C
(A)
V
D=50%
R
T
T
150
J
c
CE
G
=150°C
=85°C
=3.3Ω
=300V
Rectangular Pulse Duration in Seconds
0.001
www.microsemi.com
Single Pulse
200
Diode
0.01
APTGT150SK60T1G
300
250
200
150
100
50
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 – 5