APTGV30H60T3G Microsemi Power Products Group, APTGV30H60T3G Datasheet

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APTGV30H60T3G

Manufacturer Part Number
APTGV30H60T3G
Description
IGBT NPT BST CHOP FULL BRDG SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGV30H60T3G.pdf (9 pages)

Specifications of APTGV30H60T3G

Igbt Type
NPT, Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 30A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.6nF @ 25V
Power - Max
90W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Top switches : Trench + Field Stop IGBT
Bottom switches :
All multiple inputs and outputs must be shorted together
NPT & Trench + Field Stop
18
19
26
27
29
30
31
32
28 27 26
APT0502 on www.microsemi.com
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
13/14 ; 15/16 ; 26/27 ; 31/32
15
2
Q1
Q2
29
Power module
3
FAST NPT IGBT
Full - Bridge
25
4
CR2
30
CR1
13 14
22
23
23 22
CR4
7
8
7
CR3
31
R1
8
20
Q3
Q4
32
10
19
®
®
16
18
11 12
IGBT
11
10
4
3
16
15
14
13
www.microsemi.com
Application
Features
Benefits
Trench & Field Stop
V
Fast NPT IGBT Q2, Q4:
V
• Solar converter
• Q2, Q4 FAST Non Punch Through (NPT) IGBT
• Q1, Q3 Trench & Field Stop IGBT
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
• Optimized conduction & switching losses
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
• Low profile
• Easy paralleling due to positive T
• RoHS Compliant
CES
CES
for easy PCB mounting
= 600V ; I
= 600V ; I
- Low tail current
- Low tail current
- Switching frequency up to 100 kHz
- RBSOA & SCSOA rated
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
APTGV30H60T3G
C
C
= 30A @ Tc = 80°C
= 30A @ Tc = 80°C
®
IGBT Q1, Q3:
C
of V
®
CEsat
1 - 9

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APTGV30H60T3G Summary of contents

Page 1

... Solderable terminals both for power and signal 14 for easy PCB mounting 13 • Low profile • Easy paralleling due to positive T • RoHS Compliant www.microsemi.com APTGV30H60T3G ® IGBT Q1, Q3: = 30A @ Tc = 80° 30A @ Tc = 80° Switching frequency up to 100 kHz - RBSOA & SCSOA rated - Low tail current ® ...

Page 2

... Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off R Junction to Case Thermal resistance thJC APTGV30H60T3G = 25°C unless otherwise specified j ® characteristics Parameter T = 25° 80° 25° 25° 150°C ...

Page 3

... 25A 25A 400V R di/dt =200A/µs Parameter Test Conditions 600V CE V =15V 30A 1mA 20V www.microsemi.com APTGV30H60T3G Min Typ Max 600 T = 25° 125°C 500 80°C 25 1.8 2.2 2 125°C 1 25° 125°C 175 25° 125°C 485 j 1 ...

Page 4

... R di/dt =200A/µ Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGV30H60T3G Min Typ Max 1350 193 120 125°C 0 125°C 0.8 j 0.9 Min Typ Max 600 T = 25° ...

Page 5

... =125° 0 heatsink 17 12 ® typical performance curves =15V =150° =25°C J 1.5 2 2.5 3 (V) CE www.microsemi.com APTGV30H60T3G Min Typ Max 2500 -40 150* -40 125 -40 100 M4 2.5 4.7 110 Output Characteristics V =19V T = 150° =13V GE V =15V 0.5 1 1 (V) ...

Page 6

... Top Fast diode typical performance curves Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.6 1.4 0.9 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 APTGV30H60T3G Energy losses vs Collector Current 300V 15V 10Ω 1 150° 0.5 0 ...

Page 7

... Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0.80 0.70 -50 - Junction Temperature (°C) J APTGV30H60T3G =15V) Output Characteristics (V GE 100 250µs Pulse Test < 0.5% Duty cycle 75 T =25° =125° Collector to Emitter Voltage ( 30A 25°C ...

Page 8

... I , Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 1 Eoff, 30A 0.75 Eon, 30A 0 400V 0. 15V 125° Gate Resistance (Ohms) www.microsemi.com APTGV30H60T3G Turn-Off Delay Time vs Collector Current 125 100 V =15V =25° 400V 6.8Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...

Page 9

... Forw ard Current vs Forw ard Voltage 25° =25° 0.0 0.5 1.0 1.5 2 Anode to Cathode Voltage (V) F Single Pulse 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGV30H60T3G Operating Frequency vs Collector Current V = 400V 50 6.8Ω 125° 75°C C ZCS ZVS hard switching Collector Current (A) C ...

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