APTGV30H60T3G Microsemi Power Products Group, APTGV30H60T3G Datasheet
APTGV30H60T3G
Specifications of APTGV30H60T3G
Related parts for APTGV30H60T3G
APTGV30H60T3G Summary of contents
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... Solderable terminals both for power and signal 14 for easy PCB mounting 13 • Low profile • Easy paralleling due to positive T • RoHS Compliant www.microsemi.com APTGV30H60T3G ® IGBT Q1, Q3: = 30A @ Tc = 80° 30A @ Tc = 80° Switching frequency up to 100 kHz - RBSOA & SCSOA rated - Low tail current ® ...
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... Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off R Junction to Case Thermal resistance thJC APTGV30H60T3G = 25°C unless otherwise specified j ® characteristics Parameter T = 25° 80° 25° 25° 150°C ...
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... 25A 25A 400V R di/dt =200A/µs Parameter Test Conditions 600V CE V =15V 30A 1mA 20V www.microsemi.com APTGV30H60T3G Min Typ Max 600 T = 25° 125°C 500 80°C 25 1.8 2.2 2 125°C 1 25° 125°C 175 25° 125°C 485 j 1 ...
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... R di/dt =200A/µ Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGV30H60T3G Min Typ Max 1350 193 120 125°C 0 125°C 0.8 j 0.9 Min Typ Max 600 T = 25° ...
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... =125° 0 heatsink 17 12 ® typical performance curves =15V =150° =25°C J 1.5 2 2.5 3 (V) CE www.microsemi.com APTGV30H60T3G Min Typ Max 2500 -40 150* -40 125 -40 100 M4 2.5 4.7 110 Output Characteristics V =19V T = 150° =13V GE V =15V 0.5 1 1 (V) ...
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... Top Fast diode typical performance curves Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.6 1.4 0.9 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 APTGV30H60T3G Energy losses vs Collector Current 300V 15V 10Ω 1 150° 0.5 0 ...
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... Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0.80 0.70 -50 - Junction Temperature (°C) J APTGV30H60T3G =15V) Output Characteristics (V GE 100 250µs Pulse Test < 0.5% Duty cycle 75 T =25° =125° Collector to Emitter Voltage ( 30A 25°C ...
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... I , Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 1 Eoff, 30A 0.75 Eon, 30A 0 400V 0. 15V 125° Gate Resistance (Ohms) www.microsemi.com APTGV30H60T3G Turn-Off Delay Time vs Collector Current 125 100 V =15V =25° 400V 6.8Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...
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... Forw ard Current vs Forw ard Voltage 25° =25° 0.0 0.5 1.0 1.5 2 Anode to Cathode Voltage (V) F Single Pulse 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGV30H60T3G Operating Frequency vs Collector Current V = 400V 50 6.8Ω 125° 75°C C ZCS ZVS hard switching Collector Current (A) C ...