APTGV30H60T3G Microsemi Power Products Group, APTGV30H60T3G Datasheet - Page 6

• Manufacturer Part Number: APTGV30H60T3G
• Description: IGBT NPT BST CHOP FULL BRDG SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV30H60T3G

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 25V
• Power - Max: 90W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6.2 Top Fast diode typical performance curves
2.5
1.5
0.5
60
50
40
30
20
10
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Switching Energy Losses vs Gate Resistance
0
0.00001
2
1
0
1
0
5
0
1.6
1.4
1.2
0.8
0.6
0.4
0.2
V
V
I
T
0.00001
C
J
1
0
CE
GE
= 30A
0.7
0.5
0.1
= 150°C
0.9
0.3
T
0.05
10
= 300V
6
=15V
J
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=150°C
Transfert Characteristics
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
Gate Resistance (ohms)
T
0.9
0.3
20
0.7
0.5
0.1
0.05
J
Eon
7
=125°C
Eoff
0.0001
30
8
V
0.0001
T
GE
J
=25°C
(V)
40
T
9
J
=25°C
Eon
10
50
80
70
60
50
40
30
20
10
Rectangular Pulse Duration (Seconds)
0
0.001
Rectangular Pulse Duration in Seconds
www.microsemi.com
0.0
0.001
60
11
Forw ard Current vs Forw ard Voltage
V
F
, Anode to Cathode Voltage (V)
0.5
Single Pulse
70
12
T
J
=25°C
1.0
T
J
Single Pulse
=1 25°C
0.01
0.01
1.5
2.0
70
60
50
40
30
20
10
1.5
0.5
0
T
J
2
1
0
=-55°C
0
2.5
0
V
T
R
0.1
APTGV30H60T3G
V
V
R
T
GE
J
Reverse Bias Safe Operating Area
G
Energy losses vs Collector Current
=150°C
J
100
CE
GE
G
=10Ω
0.1
=15V
= 150°C
3.0
= 10Ω
= 300V
= 15V
10
200
20
300
V
I
1
C
CE
30
(A)
400
(V)
1
40
500
Eoff
10
600
50
Eon
10
700
60
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