APTGT30H60T3G Microsemi Power Products Group, APTGT30H60T3G Datasheet
APTGT30H60T3G
Specifications of APTGT30H60T3G
Related parts for APTGT30H60T3G
APTGT30H60T3G Summary of contents
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... V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT30H60T3G V ® CES I = 30A @ Tc = 80°C C Application • Welding converters • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT30H60T3G = 25°C unless otherwise specified j Test Conditions Min 600V 25°C V =15V 30A T = 150°C ...
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... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGT30H60T3G R T: Thermistor temperature 25 Thermistor value ...
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... Eon Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 1.6 0.9 1.4 0.7 1.2 1 0.5 0.8 0.3 0.6 0.4 0.1 0.2 0.05 0 0.00001 0.0001 APTGT30H60T3G =15V 150° =150° 2 0.5 Energy losses vs Collector Current 300V CE V ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT30H60T3G Forward Characteristic of diode 60 ...