APTGT30H60T3G Microsemi Power Products Group, APTGT30H60T3G Datasheet - Page 4

• Manufacturer Part Number: APTGT30H60T3G
• Description: IGBT MOD TRENCH FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT30H60T3G

• Igbt Type: Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 25V
• Power - Max: 90W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
60
50
40
30
20
10
2.5
1.5
0.5
60
50
40
30
20
10
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Switching Energy Losses vs Gate Resistance
0
0
0.00001
2
1
0
1
0
0
5
0
V
V
I
T
C
J
CE
GE
= 30A
0.7
0.1
0.9
0.5
= 150°C
0.3
Output Characteristics (V
T
0.05
10
0.5
6
= 300V
=15V
J
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=150°C
Transfert Characteristics
Gate Resistance (ohms)
T
Eon
T
J
20
J
=125°C
7
=125°C
T
1
J
=25°C
Eoff
0.0001
30
V
8
T
V
CE
T
J
1.5
GE
=25°C
J
=25°C
(V)
(V)
40
T
9
J
=25°C
2
Eon
50
10
GE
T
J
=15V)
=150°C
Er
0.001
Rectangular Pulse Duration in Seconds
2.5
60
11
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Single Pulse
70
3
12
0.01
IGBT
70
60
50
40
30
20
10
60
50
40
30
20
10
1.5
0.5
0
0
2
1
0
0
0
0
APTGT30H60T3G
V
T
R
T
V
V
R
T
J
GE
J
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
G
=150°C
CE
GE
J
=10Ω
100
G
= 150°C
0.5
0.1
=15V
= 150°C
= 10Ω
= 300V
= 15V
10
200
1
Output Characteristics
20
300
V
1.5
GE
V
I
V
C
=19V
CE
CE
30
(A)
400
(V)
(V)
1
2
V
GE
40
500
2.5
=15V
Eoff
V
GE
V
=13V
GE
600
50
3
=9V
Eon
Er
10
3.5
700
60
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