APTGT75DA120T1G Microsemi Power Products Group, APTGT75DA120T1G Datasheet
APTGT75DA120T1G
Specifications of APTGT75DA120T1G
Related parts for APTGT75DA120T1G
APTGT75DA120T1G Summary of contents
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... Pulsed Collector Current CM V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT75DA120T1G ® Application 11 • • • Features 3 NTC • 4 • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT75DA120T1G = 25°C unless otherwise specified j Test Conditions 1200V 25°C V =15V 75A T = 125°C C ...
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... R Resistance @ 25° 298.15 K 25/ exp SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTGT75DA120T1G To heatsink (see application note APT0406 on www.microsemi.com for more information Thermistor temperature 25 Thermistor value ...
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... 125° Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 0.0001 APTGT75DA120T1G =15V =125° ( =25° =125° (V) GE Eon Eoff Er 16 ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT75DA120T1G V =600V ...